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WSe2/WS2 Heterobilayer Nonvolatile Memory Device with Boosted Charge Retention.
ACS Appl Mater Interfaces. 2022 Jan 19;14(2):3467-3475. doi: 10.1021/acsami.1c20076. Epub 2022 Jan 7.
ACS Appl Mater Interfaces. 2022.
PMID: 34995438
Influence of Oxygen Flow Rate on Channel Width Dependent Electrical Properties of Indium Gallium Zinc Oxide Thin-Film Transistors.
Wu G, Sahoo AK.
Wu G, et al. Among authors: sahoo ak.
Nanomaterials (Basel). 2020 Nov 27;10(12):2357. doi: 10.3390/nano10122357.
Nanomaterials (Basel). 2020.
PMID: 33260908
Free PMC article.
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A Comparative Study of E-Beam Deposited Gate Dielectrics on Channel Width-Dependent Performance and Reliability of a-IGZO Thin-Film Transistors.
Wu G, Sahoo AK, Chen DW, Chang JW.
Wu G, et al. Among authors: sahoo ak.
Materials (Basel). 2018 Dec 9;11(12):2502. doi: 10.3390/ma11122502.
Materials (Basel). 2018.
PMID: 30544867
Free PMC article.
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