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Interfacial Properties of the SnO/κ-Ga2O3 p-n Heterojunction: A Case of Subsurface Doping Density Reduction via Thermal Treatment in κ-Ga2O3.
ACS Appl Mater Interfaces. 2023 Oct 4;15(39):45997-46009. doi: 10.1021/acsami.3c08841. Epub 2023 Sep 21.
ACS Appl Mater Interfaces. 2023.
PMID: 37733937
Free PMC article.
Size effect on high temperature variable range hopping in Al+ implanted 4H-SiC.
Parisini A, Parisini A, Nipoti R.
Parisini A, et al.
J Phys Condens Matter. 2017 Jan 25;29(3):035703. doi: 10.1088/1361-648X/29/3/035703. Epub 2016 Nov 21.
J Phys Condens Matter. 2017.
PMID: 27869645
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Photoelectron Holographic Study for Atomic Site Occupancy for Si Dopants in Si-Doped κ-Ga2O3(001).
Tsai Y, Hashimoto Y, Sun Z, Moriki T, Tadamura T, Nagata T, Mazzolini P, Parisini A, Bosi M, Seravalli L, Matsushita T, Yamashita Y.
Tsai Y, et al. Among authors: parisini a.
Nano Lett. 2024 Apr 3;24(13):3978-3985. doi: 10.1021/acs.nanolett.4c00482. Epub 2024 Mar 7.
Nano Lett. 2024.
PMID: 38451178
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