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anna kfar
(8 results)?
InGaN Laser Diodes with Etched Facets for Photonic Integrated Circuit Applications.
Micromachines (Basel). 2023 Feb 9;14(2):408. doi: 10.3390/mi14020408.
Micromachines (Basel). 2023.
PMID: 36838108
Free PMC article.
Monolithic 45 Degree Deflecting Mirror as a Key Element for Realization of 2D Arrays of Laser Diodes Based on AlInGaN Semiconductors.
Saba K, Kafar A, Kacperski J, Gibasiewicz K, Schiavon D, Oto T, Grzanka S, Perlin P.
Saba K, et al. Among authors: kafar a.
Micromachines (Basel). 2023 Jan 31;14(2):352. doi: 10.3390/mi14020352.
Micromachines (Basel). 2023.
PMID: 36838052
Free PMC article.
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InGaN blue light emitting micro-diodes with current path defined by tunnel junction.
Gibasiewicz K, Bojarska-Cieślińska A, Muzioł G, Skierbiszewski C, Grzanka S, Kafar A, Perlin P, Najda S, Suski T.
Gibasiewicz K, et al. Among authors: kafar a.
Opt Lett. 2020 Aug 1;45(15):4332-4335. doi: 10.1364/OL.394629.
Opt Lett. 2020.
PMID: 32735291
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450 nm (Al,In)GaN optical amplifier with double 'j-shape' waveguide for master oscillator power amplifier systems.
Stanczyk S, Kafar A, Grzanka S, Sarzynski M, Mroczynski R, Najda S, Suski T, Perlin P.
Stanczyk S, et al. Among authors: kafar a.
Opt Express. 2018 Mar 19;26(6):7351-7357. doi: 10.1364/OE.26.007351.
Opt Express. 2018.
PMID: 29609291
Free article.
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Refractive Index of Heavily Germanium-Doped Gallium Nitride Measured by Spectral Reflectometry and Ellipsometry.
Schiavon D, Mroczyński R, Kafar A, Kamler G, Levchenko I, Najda S, Perlin P.
Schiavon D, et al. Among authors: kafar a.
Materials (Basel). 2021 Nov 30;14(23):7364. doi: 10.3390/ma14237364.
Materials (Basel). 2021.
PMID: 34885522
Free PMC article.
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Kinetics of the radiative and nonradiative recombination in polar and semipolar InGaN quantum wells.
Marona L, Schiavon D, Baranowski M, Kudrawiec R, Gorczyca I, Kafar A, Perlin P.
Marona L, et al. Among authors: kafar a.
Sci Rep. 2020 Jan 27;10(1):1235. doi: 10.1038/s41598-020-58295-x.
Sci Rep. 2020.
PMID: 31988430
Free PMC article.
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