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Page 1
Growth Mechanism of Semipolar AlN Layers by HVPE on Hybrid SiC/Si(110) Substrates.
Materials (Basel). 2022 Sep 6;15(18):6202. doi: 10.3390/ma15186202.
Materials (Basel). 2022.
PMID: 36143511
Free PMC article.
Dielectric Function and Magnetic Moment of Silicon Carbide Containing Silicon Vacancies.
Kukushkin SA, Osipov AV.
Kukushkin SA, et al. Among authors: osipov av.
Materials (Basel). 2022 Jul 1;15(13):4653. doi: 10.3390/ma15134653.
Materials (Basel). 2022.
PMID: 35806775
Free PMC article.
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Spin Polarization and Magnetic Moment in Silicon Carbide Grown by the Method of Coordinated Substitution of Atoms.
Kukushkin SA, Osipov AV.
Kukushkin SA, et al. Among authors: osipov av.
Materials (Basel). 2021 Sep 26;14(19):5579. doi: 10.3390/ma14195579.
Materials (Basel). 2021.
PMID: 34639976
Free PMC article.
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Anomalous Properties of the Dislocation-Free Interface between Si(111) Substrate and 3C-SiC(111) Epitaxial Layer.
Kukushkin SA, Osipov AV.
Kukushkin SA, et al. Among authors: osipov av.
Materials (Basel). 2020 Dec 26;14(1):78. doi: 10.3390/ma14010078.
Materials (Basel). 2020.
PMID: 33375252
Free PMC article.
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Implementation of transformed lenses in bed of nails reducing refractive index maximum value and sub-unity regions.
Prado DR, Osipov AV, Quevedo-Teruel O.
Prado DR, et al. Among authors: osipov av.
Opt Lett. 2015 Mar 15;40(6):926-9. doi: 10.1364/OL.40.000926.
Opt Lett. 2015.
PMID: 25768148
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