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ali khatouf
(1 results)?
Natural Boron and 10B-Enriched Hexagonal Boron Nitride for High-Sensitivity Self-Biased Metal-Semiconductor-Metal Neutron Detectors.
ACS Omega. 2021 Dec 28;7(1):804-809. doi: 10.1021/acsomega.1c05458. eCollection 2022 Jan 11.
ACS Omega. 2021.
PMID: 35036747
Free PMC article.
O-Band Emitting InAs Quantum Dots Grown By MOCVD On A 300 mm Ge-Buffered Si (001) Substrate.
Abouzaid O, Mehdi H, Martin M, Moeyaert J, Salem B, David S, Souifi A, Chauvin N, Hartmann JM, Ilahi B, Morris D, Ahaitouf A, Ahaitouf A, Baron T.
Abouzaid O, et al. Among authors: ahaitouf a.
Nanomaterials (Basel). 2020 Dec 7;10(12):2450. doi: 10.3390/nano10122450.
Nanomaterials (Basel). 2020.
PMID: 33297597
Free PMC article.
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Towards P-Type Conduction in Hexagonal Boron Nitride: Doping Study and Electrical Measurements Analysis of hBN/AlGaN Heterojunctions.
Mballo A, Srivastava A, Sundaram S, Vuong P, Karrakchou S, Halfaya Y, Gautier S, Voss PL, Ahaitouf A, Salvestrini JP, Ougazzaden A.
Mballo A, et al. Among authors: ahaitouf a.
Nanomaterials (Basel). 2021 Jan 15;11(1):211. doi: 10.3390/nano11010211.
Nanomaterials (Basel). 2021.
PMID: 33467590
Free PMC article.
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Effectiveness of selective area growth using van der Waals h-BN layer for crack-free transfer of large-size III-N devices onto arbitrary substrates.
Karrakchou S, Sundaram S, Ayari T, Mballo A, Vuong P, Srivastava A, Gujrati R, Ahaitouf A, Patriarche G, Leichlé T, Gautier S, Moudakir T, Voss PL, Salvestrini JP, Ougazzaden A.
Karrakchou S, et al. Among authors: ahaitouf a.
Sci Rep. 2020 Dec 10;10(1):21709. doi: 10.1038/s41598-020-77681-z.
Sci Rep. 2020.
PMID: 33303773
Free PMC article.
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