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Page 1
Single-Element 2D Materials beyond Graphene: Methods of Epitaxial Synthesis.
Nanomaterials (Basel). 2022 Jun 28;12(13):2221. doi: 10.3390/nano12132221.
Nanomaterials (Basel). 2022.
PMID: 35808055
Free PMC article.
Review.
Thickness-dependent elastic strain in Stranski-Krastanow growth.
Dirko VV, Lozovoy KA, Kokhanenko AP, Voitsekhovskii AV.
Dirko VV, et al. Among authors: voitsekhovskii av.
Phys Chem Chem Phys. 2020 Sep 8;22(34):19318-19325. doi: 10.1039/d0cp03538f.
Phys Chem Chem Phys. 2020.
PMID: 32820766
Item in Clipboard
High-resolution RHEED analysis of dynamics of low-temperature superstructure transitions in Ge/Si(001) epitaxial system.
Dirko VV, Lozovoy KA, Kokhanenko AP, Voitsekhovskii AV.
Dirko VV, et al. Among authors: voitsekhovskii av.
Nanotechnology. 2021 Dec 22;33(11). doi: 10.1088/1361-6528/ac3f56.
Nanotechnology. 2021.
PMID: 34935639
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Peculiarities of the 7 × 7 to 5 × 5 Superstructure Transition during Epitaxial Growth of Germanium on Silicon (111) Surface.
Dirko VV, Lozovoy KA, Kokhanenko AP, Kukenov OI, Korotaev AG, Voitsekhovskii AV.
Dirko VV, et al. Among authors: voitsekhovskii av.
Nanomaterials (Basel). 2023 Jan 4;13(2):231. doi: 10.3390/nano13020231.
Nanomaterials (Basel). 2023.
PMID: 36677983
Free PMC article.
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Admittance Investigation of MIS Structures with HgTe-Based Single Quantum Wells.
Izhnin II, Nesmelov SN, Dzyadukh SM, Voitsekhovskii AV, Gorn DI, Dvoretsky SA, Mikhailov NN.
Izhnin II, et al. Among authors: voitsekhovskii av.
Nanoscale Res Lett. 2016 Dec;11(1):53. doi: 10.1186/s11671-016-1276-1. Epub 2016 Feb 1.
Nanoscale Res Lett. 2016.
PMID: 26831691
Free PMC article.
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Temperature spectra of conductance of Ge/Si p-i-n structures with Ge quantum dots.
Izhnin II, Fitsych OI, Pishchagin AA, Kokhanenko AP, Voitsekhovskii AV, Dzyadukh SM, Nikiforov AI.
Izhnin II, et al. Among authors: voitsekhovskii av.
Nanoscale Res Lett. 2017 Dec;12(1):131. doi: 10.1186/s11671-017-1916-0. Epub 2017 Feb 20.
Nanoscale Res Lett. 2017.
PMID: 28235368
Free PMC article.
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Generalized Muller-Kern formula for equilibrium thickness of a wetting layer with respect to the dependence of the surface energy of island facets on the thickness of the 2D layer.
Lozovoy KA, Kokhanenko AP, Voitsekhovskii AV.
Lozovoy KA, et al. Among authors: voitsekhovskii av.
Phys Chem Chem Phys. 2015 Nov 28;17(44):30052-6. doi: 10.1039/c5cp05192d. Epub 2015 Oct 26.
Phys Chem Chem Phys. 2015.
PMID: 26499174
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