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Year | Number of Results |
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2016 | 3 |
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Page 1
Droop-Free, Reliable, and High-Power InGaN/GaN Nanowire Light-Emitting Diodes for Monolithic Metal-Optoelectronics.
Nano Lett. 2016 Jul 13;16(7):4616-23. doi: 10.1021/acs.nanolett.6b01945. Epub 2016 Jun 30.
Nano Lett. 2016.
PMID: 27352143
Free article.
Direct Growth of III-Nitride Nanowire-Based Yellow Light-Emitting Diode on Amorphous Quartz Using Thin Ti Interlayer.
Prabaswara A, Min JW, Zhao C, Janjua B, Zhang D, Albadri AM, Alyamani AY, Ng TK, Ooi BS.
Prabaswara A, et al.
Nanoscale Res Lett. 2018 Feb 6;13(1):41. doi: 10.1186/s11671-018-2453-1.
Nanoscale Res Lett. 2018.
PMID: 29411164
Free PMC article.
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Ultrabroad linewidth orange-emitting nanowires LED for high CRI laser-based white lighting and gigahertz communications.
Janjua B, Ng TK, Zhao C, Oubei HM, Shen C, Prabaswara A, Alias MS, Alhamoud AA, Alatawi AA, Albadri AM, Alyamani AY, El-Desouki MM, Ooi BS.
Janjua B, et al. Among authors: prabaswara a.
Opt Express. 2016 Aug 22;24(17):19228-36. doi: 10.1364/OE.24.019228.
Opt Express. 2016.
PMID: 27557202
Free article.
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Titanium Carbide MXene Nucleation Layer for Epitaxial Growth of High-Quality GaN Nanowires on Amorphous Substrates.
Prabaswara A, Kim H, Min JW, Subedi RC, Anjum DH, Davaasuren B, Moore K, Conroy M, Mitra S, Roqan IS, Ng TK, Alshareef HN, Ooi BS.
Prabaswara A, et al.
ACS Nano. 2020 Feb 25;14(2):2202-2211. doi: 10.1021/acsnano.9b09126. Epub 2020 Feb 3.
ACS Nano. 2020.
PMID: 31986010
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Facile Formation of High-Quality InGaN/GaN Quantum-Disks-in-Nanowires on Bulk-Metal Substrates for High-Power Light-Emitters.
Zhao C, Ng TK, Wei N, Prabaswara A, Alias MS, Janjua B, Shen C, Ooi BS.
Zhao C, et al. Among authors: prabaswara a.
Nano Lett. 2016 Feb 10;16(2):1056-63. doi: 10.1021/acs.nanolett.5b04190. Epub 2016 Jan 14.
Nano Lett. 2016.
PMID: 26745217
Free article.
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Direct Growth of Single Crystalline GaN Nanowires on Indium Tin Oxide-Coated Silica.
Prabaswara A, Min JW, Subedi RC, Tangi M, Holguin-Lerma JA, Zhao C, Priante D, Ng TK, Ooi BS.
Prabaswara A, et al.
Nanoscale Res Lett. 2019 Feb 5;14(1):45. doi: 10.1186/s11671-019-2870-9.
Nanoscale Res Lett. 2019.
PMID: 30721361
Free PMC article.
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An enhanced surface passivation effect in InGaN/GaN disk-in-nanowire light emitting diodes for mitigating Shockley-Read-Hall recombination.
Zhao C, Ng TK, Prabaswara A, Conroy M, Jahangir S, Frost T, O'Connell J, Holmes JD, Parbrook PJ, Bhattacharya P, Ooi BS.
Zhao C, et al. Among authors: prabaswara a.
Nanoscale. 2015 Oct 28;7(40):16658-65. doi: 10.1039/c5nr03448e.
Nanoscale. 2015.
PMID: 26242178
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