Plasmonic silver nanosphere enhanced ZnSe nanoribbon/Si heterojunction optoelectronic devices

Li Wang; Ran Chen; Zhi-Fei Ren; Cai-Wang Ge; Zhen-Xing Liu; Shu-Juan He; Yong-Qiang Yu; Chun-Yan Wu; Lin-Bao Luo

doi:10.1088/0957-4484/27/21/215202

Plasmonic silver nanosphere enhanced ZnSe nanoribbon/Si heterojunction optoelectronic devices

Nanotechnology. 2016 May 27;27(21):215202. doi: 10.1088/0957-4484/27/21/215202. Epub 2016 Apr 15.

Authors

Li Wang¹, Ran Chen, Zhi-Fei Ren, Cai-Wang Ge, Zhen-Xing Liu, Shu-Juan He, Yong-Qiang Yu, Chun-Yan Wu, Lin-Bao Luo

Affiliation

¹ School of Electronic Science and Applied Physics and Anhui Provincial Key Laboratory of Advanced Materials and Devices, Hefei University of Technology, Hefei, Anhui 230009, People's Republic of China.

PMID: 27082740
DOI: 10.1088/0957-4484/27/21/215202

Abstract

In this study, we report a localized surface plasmon resonance (LSPR) enhanced optoelectronic device based on a ZnSe:Sb nanoribbon (NR)/Si nano-heterojunction. We experimentally demonstrated that the LSPR peaks of plasmonic Ag nanoparticles (Ag NPs) can be readily tuned by changing their size distribution. Optical analysis reveals that the absorption of ZnSe:Sb NRs was increased after the decoration of the Ag NPs with strong LSPR. Further analysis of the optoelectronic device confirmed the device performance can be promoted: for example, the short-circuit photocurrent density of the ZnSe/Si heterojunction solar cell was improved by 57.6% from 11.75 to 18.52 mA cm(-2) compared to that without Ag NPs. Meanwhile, the responsivity and detectivity of the ZnSe:Sb NRs/Si heterojunction device increased from 117.2 to 184.8 mA W(-1), and from 5.86 × 10(11) to 9.20 × 10(11) cm Hz(1/2) W(-1), respectively.

Publication types

Research Support, Non-U.S. Gov't