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Hydrogen-induced breakdown of low-temperature molecular-beam epitaxy of Si.
Asoka-Kumar P, Szpala S, Nielsen B, Szeles C, Lynn KG, Lanford WA, Shepard CA, Gossmann H. Asoka-Kumar P, et al. Among authors: lynn kg. Phys Rev B Condens Matter. 1995 Feb 15;51(7):4630-4632. doi: 10.1103/physrevb.51.4630. Phys Rev B Condens Matter. 1995. PMID: 9979312 No abstract available.
SiO2/Si interface properties using positrons.
Asoka-Kumar P, Lynn KG, Leung TC, Nielsen B, Rubloff GW, Weinberg ZA. Asoka-Kumar P, et al. Among authors: lynn kg. Phys Rev B Condens Matter. 1991 Sep 15;44(11):5885-5888. doi: 10.1103/physrevb.44.5885. Phys Rev B Condens Matter. 1991. PMID: 9998435 No abstract available.
Temperature dependence of positron diffusion in metals.
Schultz PJ, Lynn KG, Nielsen B. Schultz PJ, et al. Among authors: lynn kg. Phys Rev B Condens Matter. 1985 Jul 15;32(2):1369-1372. doi: 10.1103/physrevb.32.1369. Phys Rev B Condens Matter. 1985. PMID: 9937167 No abstract available.
Positron diffusion in Si.
Nielsen B, Lynn KG, Vehanen A, Schultz PJ. Nielsen B, et al. Among authors: lynn kg. Phys Rev B Condens Matter. 1985 Aug 15;32(4):2296-2301. doi: 10.1103/physrevb.32.2296. Phys Rev B Condens Matter. 1985. PMID: 9937300 No abstract available.
Field effect on positron diffusion in semi-insulating GaAs.
Shan YY, Asoka-Kumar P, Lynn KG, Fung S, Beling CD. Shan YY, et al. Among authors: lynn kg. Phys Rev B Condens Matter. 1996 Jul 15;54(3):1982-1986. doi: 10.1103/physrevb.54.1982. Phys Rev B Condens Matter. 1996. PMID: 9986048 No abstract available.
Microvoids at the SiO2/Si interface.
Nielsen B, Lynn KG, Welch DO, Leung TC, Rubloff GW. Nielsen B, et al. Among authors: lynn kg. Phys Rev B Condens Matter. 1989 Jul 15;40(2):1434-1437. doi: 10.1103/physrevb.40.1434. Phys Rev B Condens Matter. 1989. PMID: 9991995 No abstract available.
66 results