Gossmann H - Search Results

1

Hydrogen-induced breakdown of low-temperature molecular-beam epitaxy of Si.

Asoka-Kumar P, Szpala S, Nielsen B, Szeles C, Lynn KG, Lanford WA, Shepard CA, Gossmann H. Asoka-Kumar P, et al. Among authors: gossmann h. Phys Rev B Condens Matter. 1995 Feb 15;51(7):4630-4632. doi: 10.1103/physrevb.51.4630. Phys Rev B Condens Matter. 1995. PMID: 9979312 No abstract available.

2

Distribution of point defects in Si(100)/Si grown by low-temperature molecular-beam epitaxy and solid-phase epitaxy.

Asoka-Kumar P, Gossmann H, Unterwald FC, Feldman LC, Leung TC, Au HL, Talyanski V V, Nielsen B, Lynn KG. Asoka-Kumar P, et al. Among authors: gossmann h. Phys Rev B Condens Matter. 1993 Aug 15;48(8):5345-5353. doi: 10.1103/physrevb.48.5345. Phys Rev B Condens Matter. 1993. PMID: 10009054 No abstract available.

3

Defect identification using the core-electron contribution in Doppler-broadening spectroscopy of positron-annihilation radiation.

Szpala S, Asoka-Kumar P, Nielsen B, Peng JP, Hayakawa S, Lynn KG, Gossmann H. Szpala S, et al. Among authors: gossmann h. Phys Rev B Condens Matter. 1996 Aug 15;54(7):4722-4731. doi: 10.1103/physrevb.54.4722. Phys Rev B Condens Matter. 1996. PMID: 9986432 No abstract available.

4

Initial stages of silicon molecular-beam epitaxy: Effects of surface reconstruction.

Gossmann H, Feldman LC. Gossmann H, et al. Phys Rev B Condens Matter. 1985 Jul 1;32(1):6-11. doi: 10.1103/physrevb.32.6. Phys Rev B Condens Matter. 1985. PMID: 9936634 No abstract available.

5

Dopant electrical activity and majority-carrier mobility in B- and Sb- delta -doped Si thin films.

Gossmann H, Unterwald FC. Gossmann H, et al. Phys Rev B Condens Matter. 1993 May 15;47(19):12618-12624. doi: 10.1103/physrevb.47.12618. Phys Rev B Condens Matter. 1993. PMID: 10005456 No abstract available.

6

Nonequilibrium effects in the channeling of energetic particles through ultrathin Si/Ge/Si heterostructures: A Monte Carlo study.

Gossmann H. Gossmann H. Phys Rev B Condens Matter. 1989 May 15;39(14):10108-10113. doi: 10.1103/physrevb.39.10108. Phys Rev B Condens Matter. 1989. PMID: 9947789 No abstract available.

7

7 x 7 reconstruction of Ge(111) surfaces under compressive strain.

Gossmann H, Bean JC, Feldman LC, McRae EG, Robinson IK. Gossmann H, et al. Phys Rev Lett. 1985 Sep 2;55(10):1106-1109. doi: 10.1103/PhysRevLett.55.1106. Phys Rev Lett. 1985. PMID: 10031729 No abstract available.

8

Preservation of a 7 x 7 periodicity at a buried amorphous Si/Si(111) interface.

Gibson JM, Gossmann H, Bean JC, Tung RT, Feldman LC. Gibson JM, et al. Among authors: gossmann h. Phys Rev Lett. 1986 Jan 27;56(4):355-358. doi: 10.1103/PhysRevLett.56.355. Phys Rev Lett. 1986. PMID: 10033166 No abstract available.

9

Strain in ultrathin epitaxial films of Ge/Si(100) measured by ion scattering and channeling.

Feldman LC, Bevk J, Davidson BA, Gossmann H, Mannaerts JP. Feldman LC, et al. Among authors: gossmann h. Phys Rev Lett. 1987 Aug 10;59(6):664-667. doi: 10.1103/PhysRevLett.59.664. Phys Rev Lett. 1987. PMID: 10035839 No abstract available.

10

Arsenic atom location on passivated silicon (111) surfaces.

Patel JR, Golovchenko JA, Freeland PE, Gossmann HJ. Patel JR, et al. Phys Rev B Condens Matter. 1987 Nov 15;36(14):7715-7717. doi: 10.1103/physrevb.36.7715. Phys Rev B Condens Matter. 1987. PMID: 9942562 No abstract available.

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