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Confinement-Induced Isosymmetric Metal-Insulator Transition in Ultrathin Epitaxial V2O3 Films.
ACS Appl Mater Interfaces. 2024 Apr 29. doi: 10.1021/acsami.3c18807. Online ahead of print.
ACS Appl Mater Interfaces. 2024.
PMID: 38683636
Efficient Direct Band-Gap Transition in Germanium by Three-Dimensional Strain.
Mellaerts S, Afanas'ev V, Seo JW, Houssa M, Locquet JP.
Mellaerts S, et al.
ACS Appl Mater Interfaces. 2021 Jul 7;13(26):30941-30949. doi: 10.1021/acsami.1c03700. Epub 2021 Jun 22.
ACS Appl Mater Interfaces. 2021.
PMID: 34157228
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