Goh KEJ - Search Results

1

Role of S-Vacancy Concentration in Air Oxidation of WS₂ Single Crystals.

Bussolotti F, Kawai H, Maddumapatabandi TD, Fu W, Khoo KH, Goh KEJ. Bussolotti F, et al. Among authors: goh kej. ACS Nano. 2024 Mar 26;18(12):8706-8717. doi: 10.1021/acsnano.3c10389. Epub 2024 Mar 11. ACS Nano. 2024. PMID: 38465866

2

Impact of S-Vacancies on the Charge Injection Barrier at the Electrical Contact with the MoS₂ Monolayer.

Bussolotti F, Yang J, Kawai H, Wong CPY, Goh KEJ. Bussolotti F, et al. Among authors: goh kej. ACS Nano. 2021 Feb 23;15(2):2686-2697. doi: 10.1021/acsnano.0c07982. Epub 2021 Jan 27. ACS Nano. 2021. PMID: 33502172

3

Modification of Vapor Phase Concentrations in MoS₂ Growth Using a NiO Foam Barrier.

Lim YF, Priyadarshi K, Bussolotti F, Gogoi PK, Cui X, Yang M, Pan J, Tong SW, Wang S, Pennycook SJ, Goh KEJ, Wee ATS, Wong SL, Chi D. Lim YF, et al. Among authors: goh kej. ACS Nano. 2018 Feb 27;12(2):1339-1349. doi: 10.1021/acsnano.7b07682. Epub 2018 Jan 22. ACS Nano. 2018. PMID: 29338197

4

Liquid-Metal-Printed Ultrathin Oxides for Atomically Smooth 2D Material Heterostructures.

Zhang Y, Venkatakrishnarao D, Bosman M, Fu W, Das S, Bussolotti F, Lee R, Teo SL, Huang D, Verzhbitskiy I, Jiang Z, Jiang Z, Chai J, Tong SW, Ooi ZE, Wong CPY, Ang YS, Goh KEJ, Lau CS. Zhang Y, et al. Among authors: goh kej. ACS Nano. 2023 Apr 25;17(8):7929-7939. doi: 10.1021/acsnano.3c02128. Epub 2023 Apr 6. ACS Nano. 2023. PMID: 37021759

5

Gate-Defined Quantum Confinement in CVD 2D WS₂.

Lau CS, Chee JY, Cao L, Ooi ZE, Tong SW, Bosman M, Bussolotti F, Deng T, Wu G, Yang SW, Wang T, Teo SL, Wong CPY, Chai JW, Chen L, Zhang ZM, Ang KW, Ang YS, Goh KEJ. Lau CS, et al. Among authors: goh kej. Adv Mater. 2022 Jun;34(25):e2103907. doi: 10.1002/adma.202103907. Epub 2021 Aug 26. Adv Mater. 2022. PMID: 34437744

6

Electronic properties of atomically thin MoS₂ layers grown by physical vapour deposition: band structure and energy level alignment at layer/substrate interfaces.

Bussolotti F, Chai J, Yang M, Kawai H, Zhang Z, Wang S, Wong SL, Manzano C, Huang Y, Chi D, Goh KEJ. Bussolotti F, et al. Among authors: goh kej. RSC Adv. 2018 Feb 16;8(14):7744-7752. doi: 10.1039/c8ra00635k. eCollection 2018 Feb 14. RSC Adv. 2018. PMID: 35539107 Free PMC article.

7

Can Reconstructed Se-Deficient Line Defects in Monolayer VSe₂ Induce Magnetism?

Chua R, Yang J, He X, Yu X, Yu W, Bussolotti F, Wong PKJ, Loh KP, Breese MBH, Goh KEJ, Huang YL, Wee ATS. Chua R, et al. Among authors: goh kej. Adv Mater. 2020 Jun;32(24):e2000693. doi: 10.1002/adma.202000693. Epub 2020 May 8. Adv Mater. 2020. PMID: 32383232

8

Interlayer interactions in 2D WS₂/MoS₂ heterostructures monolithically grown by in situ physical vapor deposition.

Yang W , Kawai H , Bosman M , Tang B , Chai J , Tay WL , Yang J , Seng HL , Zhu H , Gong H , Liu H , Goh KEJ , Wang S , Chi D . Yang W , et al. Among authors: goh kej. Nanoscale. 2018 Dec 13;10(48):22927-22936. doi: 10.1039/c8nr07498d. Nanoscale. 2018. PMID: 30499578

9

Evidence of Spin Frustration in a Vanadium Diselenide Monolayer Magnet.

Wong PKJ, Zhang W, Bussolotti F, Yin X, Herng TS, Zhang L, Huang YL, Vinai G, Krishnamurthi S, Bukhvalov DW, Zheng YJ, Chua R, N'Diaye AT, Morton SA, Yang CY, Ou Yang KH, Torelli P, Chen W, Goh KEJ, Ding J, Lin MT, Brocks G, de Jong MP, Castro Neto AH, Wee ATS. Wong PKJ, et al. Among authors: goh kej. Adv Mater. 2019 Jun;31(23):e1901185. doi: 10.1002/adma.201901185. Epub 2019 Apr 18. Adv Mater. 2019. PMID: 30997712

10

Correction to Metallic 1T Phase, 3d¹ Electronic Configuration and Charge Density Wave Order in Molecular-Beam Epitaxy Grown Monolayer Vanadium Ditelluride.

Wong PKJ, Zhang W, Zhou J, Bussolotti F, Yin X, Zhang L, N'Diaye AT, Morton SA, Chen W, Goh KEJ, de Jong MP, Feng YP, Wee ATS. Wong PKJ, et al. Among authors: goh kej. ACS Nano. 2020 Jan 28;14(1):1210. doi: 10.1021/acsnano.9b09833. Epub 2019 Dec 20. ACS Nano. 2020. PMID: 31860267 No abstract available.

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