Wang G - Search Results

1

Effective electrical manipulation of a topological antiferromagnet by orbital torques.

Zheng Z, Zeng T, Zhao T, Shi S, Ren L, Zhang T, Jia L, Gu Y, Xiao R, Zhou H, Zhang Q, Lu J, Wang G, Zhao C, Li H, Tay BK, Chen J. Zheng Z, et al. Among authors: wang g. Nat Commun. 2024 Jan 25;15(1):745. doi: 10.1038/s41467-024-45109-1. Nat Commun. 2024. PMID: 38272914 Free PMC article.

2

Low-Temperature (≤500 °C) Complementary Schottky Source/Drain FinFETs for 3D Sequential Integration.

Mao S, Gao J, He X, Liu W, Liu J, Wang G, Zhou N, Luo Y, Cao L, Zhang R, Liu H, Li X, Li Y, Wu Z, Li J, Luo J, Zhao C, Wang W, Yin H. Mao S, et al. Among authors: wang g, wang w. Nanomaterials (Basel). 2022 Apr 5;12(7):1218. doi: 10.3390/nano12071218. Nanomaterials (Basel). 2022. PMID: 35407340 Free PMC article.

3

A Voltage-Modulated Nanostrip Spin-Wave Filter and Spin Logic Device Thereof.

Li H, Dong B, Hu Q, Zhang Y, Wang G, Meng H, Zhao C. Li H, et al. Among authors: wang g. Nanomaterials (Basel). 2022 Oct 30;12(21):3838. doi: 10.3390/nano12213838. Nanomaterials (Basel). 2022. PMID: 36364614 Free PMC article.

4

Insight into over Repair of Hot Carrier Degradation by GIDL Current in Si p-FinFETs Using Ultra-Fast Measurement Technique.

Chang H, Wang G, Yang H, Liu Q, Zhou L, Ji Z, Yu R, Wu Z, Yin H, Du A, Li J, Luo J, Zhao C, Wang W. Chang H, et al. Among authors: wang g, wang w. Nanomaterials (Basel). 2023 Apr 3;13(7):1259. doi: 10.3390/nano13071259. Nanomaterials (Basel). 2023. PMID: 37049352 Free PMC article.

5

Undoped Strained Ge Quantum Well with Ultrahigh Mobility of Two Million.

Kong Z, Li Z, Cao G, Su J, Zhang Y, Liu J, Liu J, Ren Y, Li H, Wei L, Guo GP, Wu Y, Radamson HH, Li J, Wu Z, Li HO, Yang J, Zhao C, Ye T, Wang G. Kong Z, et al. Among authors: wang g. ACS Appl Mater Interfaces. 2023 Jun 14;15(23):28799-28805. doi: 10.1021/acsami.3c03294. Epub 2023 May 11. ACS Appl Mater Interfaces. 2023. PMID: 37166277

6

Highly Energy-Efficient Spin Current Generation in SrIrO₃ by Manipulating the Octahedral Rotation.

Zhang Q, Shi S, Zheng Z, Zhou H, Shao DF, Zhao T, Su H, Liu L, Shu X, Jia L, Gu Y, Xiao R, Wang G, Zhao C, Li H, Chen J. Zhang Q, et al. Among authors: wang g. ACS Appl Mater Interfaces. 2024 Jan 10;16(1):1129-1136. doi: 10.1021/acsami.3c15514. Epub 2023 Dec 20. ACS Appl Mater Interfaces. 2024. PMID: 38118124

7

Amorphous oxide semiconductor for monolithic 3D DRAM: an enabler or passer-by?

Mao S, Wang G, Zhao C. Mao S, et al. Among authors: wang g. Natl Sci Rev. 2023 Nov 21;11(3):nwad290. doi: 10.1093/nsr/nwad290. eCollection 2024 Mar. Natl Sci Rev. 2023. PMID: 38312381 Free PMC article.

8

pMOSFETs Featuring ALD W Filling Metal Using SiH₄ and B₂H₆ Precursors in 22 nm Node CMOS Technology.

Wang G, Luo J, Liu J, Yang T, Xu Y, Li J, Yin H, Yan J, Zhu H, Zhao C, Ye T, Radamson HH. Wang G, et al. Nanoscale Res Lett. 2017 Dec;12(1):306. doi: 10.1186/s11671-017-2080-2. Epub 2017 Apr 26. Nanoscale Res Lett. 2017. PMID: 28449546 Free PMC article.

9

Study of Selective Dry Etching Effects of 15-Cycle Si_0.7Ge_0.3/Si Multilayer Structure in Gate-All-Around Transistor Process.

Liu E, Li J, Zhou N, Chen R, Shao H, Gao J, Zhang Q, Kong Z, Lin H, Zhang C, Lai P, Yang C, Liu Y, Wang G, Zhao C, Yang T, Yin H, Li J, Luo J, Wang W. Liu E, et al. Among authors: wang g, wang w. Nanomaterials (Basel). 2023 Jul 21;13(14):2127. doi: 10.3390/nano13142127. Nanomaterials (Basel). 2023. PMID: 37513138 Free PMC article.

10

Interface Investigation on SiGe/Si Multilayer Structures: Influence of Different Epitaxial Process Conditions.

Kong Z, Song Y, Wang H, Liu X, Wang X, Liu J, Li B, Su J, Tan X, Luan Q, Lin H, Ren Y, Zhang Y, Liu J, Li J, Du A, Radamson HH, Zhao C, Ye T, Wang G. Kong Z, et al. Among authors: wang h, wang x, wang g. ACS Appl Mater Interfaces. 2023 Dec 6;15(48):56567-56574. doi: 10.1021/acsami.3c14168. Epub 2023 Nov 21. ACS Appl Mater Interfaces. 2023. PMID: 37988059

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