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Auxetic piezoelectric effect in heterostructures.
Nat Mater. 2024 Jan;23(1):95-100. doi: 10.1038/s41563-023-01736-5. Epub 2023 Nov 30.
Nat Mater. 2024.
PMID: 38036625
Free PMC article.
Three-Dimensional Epitaxy of Low-Defect 3C-SiC on a Geometrically Modified Silicon Substrate.
Colston G, Turner K, Renz A, Perera K, Gammon PM, Antoniou M, Shah VA.
Colston G, et al. Among authors: gammon pm.
Materials (Basel). 2024 Mar 30;17(7):1587. doi: 10.3390/ma17071587.
Materials (Basel). 2024.
PMID: 38612100
Free PMC article.
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SiC Doping Impact during Conducting AFM under Ambient Atmosphere.
Villeneuve-Faure C, Boumaarouf A, Shah V, Gammon PM, Lüders U, Coq Germanicus R.
Villeneuve-Faure C, et al. Among authors: gammon pm.
Materials (Basel). 2023 Aug 1;16(15):5401. doi: 10.3390/ma16155401.
Materials (Basel). 2023.
PMID: 37570104
Free PMC article.
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Nanoscale conductive pattern of the homoepitaxial AlGaN/GaN transistor.
Pérez-Tomás A, Catalàn G, Fontserè A, Iglesias V, Chen H, Gammon PM, Jennings MR, Thomas M, Fisher CA, Sharma YK, Placidi M, Chmielowska M, Chenot S, Porti M, Nafría M, Cordier Y.
Pérez-Tomás A, et al. Among authors: gammon pm.
Nanotechnology. 2015 Mar 20;26(11):115203. doi: 10.1088/0957-4484/26/11/115203. Epub 2015 Feb 26.
Nanotechnology. 2015.
PMID: 25719801
Free article.
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Nanoscale investigation of AlGaN/GaN-on-Si high electron mobility transistors.
Fontserè A, Pérez-Tomás A, Placidi M, Llobet J, Baron N, Chenot S, Cordier Y, Moreno JC, Jennings MR, Gammon PM, Fisher CA, Iglesias V, Porti M, Bayerl A, Lanza M, Nafría M.
Fontserè A, et al. Among authors: gammon pm.
Nanotechnology. 2012 Oct 5;23(39):395204. doi: 10.1088/0957-4484/23/39/395204. Epub 2012 Sep 12.
Nanotechnology. 2012.
PMID: 22971927
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