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Nanoscale Electrostructural Characterization of Compositionally Graded Al(x)Ga(1-x)N Heterostructures on GaN/Sapphire (0001) Substrate.
Kuchuk AV, Lytvyn PM, Li C, Stanchu HV, Mazur YI, Ware ME, Benamara M, Ratajczak R, Dorogan V, Kladko VP, Belyaev AE, Salamo GG. Kuchuk AV, et al. Among authors: stanchu hv. ACS Appl Mater Interfaces. 2015 Oct 21;7(41):23320-7. doi: 10.1021/acsami.5b07924. Epub 2015 Oct 9. ACS Appl Mater Interfaces. 2015. PMID: 26431166
The growth of Ge and direct bandgap Ge1-xSnx on GaAs (001) by molecular beam epitaxy.
Gunder C, Maia de Oliveira F, Wangila E, Stanchu H, Zamani-Alavijeh M, Ojo S, Acharya S, Said A, Li C, Mazur YI, Yu SQ, Salamo GJ. Gunder C, et al. Among authors: stanchu h. RSC Adv. 2024 Jan 3;14(2):1250-1257. doi: 10.1039/d3ra06774b. eCollection 2024 Jan 2. RSC Adv. 2024. PMID: 38174282 Free PMC article.