Necking Reduction at Low Temperature in Aspect Ratio Etching of SiO2 at CF4/H2/Ar Plasma.
Kwon HT, Bang IY, Kim JH, Kim HJ, Lim SY, Kim SY, Cho SH, Kim JH, Kim WJ, Shin GW, Kwon GC.
Kwon HT, et al. Among authors: kim hj, kim wj, kim sy, kim jh.
Nanomaterials (Basel). 2024 Jan 17;14(2):209. doi: 10.3390/nano14020209.
Nanomaterials (Basel). 2024.
PMID: 38251172
Free PMC article.