Fanciulli M - Search Results

1

Exploiting the Close-to-Dirac Point Shift of the Fermi Level in the Sb₂Te₃/Bi₂Te₃ Topological Insulator Heterostructure for Spin-Charge Conversion.

Longo E, Locatelli L, Tsipas P, Lintzeris A, Dimoulas A, Fanciulli M, Longo M, Mantovan R. Longo E, et al. Among authors: fanciulli m. ACS Appl Mater Interfaces. 2023 Nov 1;15(43):50237-50245. doi: 10.1021/acsami.3c08830. Epub 2023 Oct 20. ACS Appl Mater Interfaces. 2023. PMID: 37862590 Free PMC article.

2

Development of a parallel-plate avalanche counter to perform conversion electron Mössbauer spectroscopy at low temperatures.

Mantovan R, Fanciulli M. Mantovan R, et al. Among authors: fanciulli m. Rev Sci Instrum. 2007 Jun;78(6):063902. doi: 10.1063/1.2745654. Rev Sci Instrum. 2007. PMID: 17614621

3

Size dependence of the Mössbauer recoilless fraction in β-Sn nanocrystals.

Mantovan R, Debernardi A, Fanciulli M. Mantovan R, et al. Among authors: fanciulli m. J Phys Condens Matter. 2008 Sep 24;20(38):385201. doi: 10.1088/0953-8984/20/38/385201. Epub 2008 Aug 21. J Phys Condens Matter. 2008. PMID: 21693820

4

Metal organic chemical vapor deposition of phase change Ge1Sb2Te4 nanowires.

Longo M, Fallica R, Wiemer C, Salicio O, Fanciulli M, Rotunno E, Lazzarini L. Longo M, et al. Among authors: fanciulli m. Nano Lett. 2012 Mar 14;12(3):1509-15. doi: 10.1021/nl204301h. Epub 2012 Mar 6. Nano Lett. 2012. PMID: 22364321

5

Fe charge state adjustment in ZnO upon ion implantation.

Mantovan R, Gunnlaugsson HP, Naidoo D, Olafsson S, Johnston K, Masenda H, Mølholt TE, Bharuth-Ram K, Fanciulli M, Gislason HP, Langouche G, Sielemann R, Weyer G, Isolde Collaboration. Mantovan R, et al. Among authors: fanciulli m. J Phys Condens Matter. 2012 Dec 5;24(48):485801. doi: 10.1088/0953-8984/24/48/485801. Epub 2012 Nov 9. J Phys Condens Matter. 2012. PMID: 23139235

6

Phase stabilization of Al:HfO2 grown on In(x)Ga(1-x)As substrates (x = 0, 0.15, 0.53) via trimethylaluminum-based atomic layer deposition.

Cianci E, Molle A, Lamperti A, Wiemer C, Spiga S, Fanciulli M. Cianci E, et al. Among authors: fanciulli m. ACS Appl Mater Interfaces. 2014 Mar 12;6(5):3455-61. doi: 10.1021/am405617q. Epub 2014 Feb 21. ACS Appl Mater Interfaces. 2014. PMID: 24512108

7

Atomic-scale study of the amorphous-to-crystalline phase transition mechanism in GeTe thin films.

Mantovan R, Fallica R, Mokhles Gerami A, Mølholt TE, Wiemer C, Longo M, Gunnlaugsson HP, Johnston K, Masenda H, Naidoo D, Ncube M, Bharuth-Ram K, Fanciulli M, Gislason HP, Langouche G, Ólafsson S, Weyer G. Mantovan R, et al. Among authors: fanciulli m. Sci Rep. 2017 Aug 15;7(1):8234. doi: 10.1038/s41598-017-08275-5. Sci Rep. 2017. PMID: 28811632 Free PMC article.

8

Significant enhancement of ferromagnetism above room temperature in epitaxial 2D van der Waals ferromagnet Fe_5-δGeTe₂/Bi₂Te₃ heterostructures.

Georgopoulou-Kotsaki E, Pappas P, Lintzeris A, Tsipas P, Fragkos S, Markou A, Felser C, Longo E, Fanciulli M, Mantovan R, Mahfouzi F, Kioussis N, Dimoulas A. Georgopoulou-Kotsaki E, et al. Among authors: fanciulli m. Nanoscale. 2023 Feb 2;15(5):2223-2233. doi: 10.1039/d2nr04820e. Nanoscale. 2023. PMID: 36625389

9

Few electron limit of n-type metal oxide semiconductor single electron transistors.

Prati E, De Michielis M, Belli M, Cocco S, Fanciulli M, Kotekar-Patil D, Ruoff M, Kern DP, Wharam DA, Verduijn J, Tettamanzi GC, Rogge S, Roche B, Wacquez R, Jehl X, Vinet M, Sanquer M. Prati E, et al. Among authors: fanciulli m. Nanotechnology. 2012 Jun 1;23(21):215204. doi: 10.1088/0957-4484/23/21/215204. Nanotechnology. 2012. PMID: 22552118

10

Silicene field-effect transistors operating at room temperature.

Tao L, Cinquanta E, Chiappe D, Grazianetti C, Fanciulli M, Dubey M, Molle A, Akinwande D. Tao L, et al. Among authors: fanciulli m. Nat Nanotechnol. 2015 Mar;10(3):227-31. doi: 10.1038/nnano.2014.325. Epub 2015 Feb 2. Nat Nanotechnol. 2015. PMID: 25643256

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