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Thickness-Dependent Structural and Electrical Properties of WS2 Nanosheets Obtained via the ALD-Grown WO3 Sulfurization Technique as a Channel Material for Field-Effect Transistors.
Romanov RI, Kozodaev MG, Chernikova AG, Zabrosaev IV, Chouprik AA, Zarubin SS, Novikov SM, Volkov VS, Markeev AM. Romanov RI, et al. Among authors: zabrosaev iv. ACS Omega. 2021 Dec 9;6(50):34429-34437. doi: 10.1021/acsomega.1c04532. eCollection 2021 Dec 21. ACS Omega. 2021. PMID: 34963928 Free PMC article.