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Exploiting Ambipolarity in Graphene Field-Effect Transistors for Novel Designs on High-Frequency Analog Electronics.
Small. 2023 Dec;19(49):e2303595. doi: 10.1002/smll.202303595. Epub 2023 Aug 23.
Small. 2023.
PMID: 37612804
Review.
Physics-based bias-dependent compact modeling of 1/f noise in single- to few-layer 2D-FETs.
Mavredakis N, Pacheco-Sanchez A, Alam MH, Guimerà-Brunet A, Martinez J, Garrido JA, Akinwande D, Jiménez D.
Mavredakis N, et al. Among authors: pacheco sanchez a.
Nanoscale. 2023 Apr 6;15(14):6853-6863. doi: 10.1039/d3nr00922j.
Nanoscale. 2023.
PMID: 36961453
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Compact Modeling Technology for the Simulation of Integrated Circuits Based on Graphene Field-Effect Transistors.
Pasadas F, Feijoo PC, Mavredakis N, Pacheco-Sanchez A, Chaves FA, Jiménez D.
Pasadas F, et al. Among authors: pacheco sanchez a.
Adv Mater. 2022 Dec;34(48):e2201691. doi: 10.1002/adma.202201691. Epub 2022 Nov 7.
Adv Mater. 2022.
PMID: 35593428
Review.
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