Gate-bias instability of few-layer WSe2 field effect transistors.
Wen S, Lan C, Li C, Zhou S, He T, Zhang R, Zou R, Hu H, Yin Y, Liu Y.
Wen S, et al. Among authors: li c.
RSC Adv. 2021 Feb 10;11(12):6818-6824. doi: 10.1039/d0ra09376a. eCollection 2021 Feb 4.
RSC Adv. 2021.
PMID: 35423215
Free PMC article.