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Resistance Switching Characteristics Induced by O2 Plasma Treatment of an Indium Tin Oxide Film for Use as an Insulator in Resistive Random Access Memory.
Chen PH, Chang TC, Chang KC, Tsai TM, Pan CH, Chen MC, Su YT, Lin CY, Tseng YT, Huang HC, Wu H, Deng N, Qian H, Sze SM. Chen PH, et al. Among authors: chang tc, chang kc. ACS Appl Mater Interfaces. 2017 Jan 25;9(3):3149-3155. doi: 10.1021/acsami.6b14282. Epub 2017 Jan 10. ACS Appl Mater Interfaces. 2017. PMID: 28072511
Adaptive Synaptic Memory via Lithium Ion Modulation in RRAM Devices.
Lin CY, Chen J, Chen PH, Chang TC, Wu Y, Eshraghian JK, Moon J, Yoo S, Wang YH, Chen WC, Wang ZY, Huang HC, Li Y, Miao X, Lu WD, Sze SM. Lin CY, et al. Among authors: chang tc. Small. 2020 Oct;16(42):e2003964. doi: 10.1002/smll.202003964. Epub 2020 Sep 29. Small. 2020. PMID: 32996256
Investigation of the Capacitance-Voltage Electrical Characteristics of Thin-Film Transistors Caused by Hydrogen Diffusion under Negative Bias Stress in a Moist Environment.
Chen HC, Kuo CW, Chang TC, Lai WC, Chen PH, Chen GF, Huang SP, Chen JJ, Zhou KJ, Shih CC, Tsao YC, Huang HC, Sze SM. Chen HC, et al. Among authors: chang tc. ACS Appl Mater Interfaces. 2019 Oct 30;11(43):40196-40203. doi: 10.1021/acsami.9b11637. Epub 2019 Oct 15. ACS Appl Mater Interfaces. 2019. PMID: 31573173
Surface Engineering of Polycrystalline Silicon for Long-Term Mechanical Stress Endurance Enhancement in Flexible Low-Temperature Poly-Si Thin-Film Transistors.
Chen BW, Chang TC, Chang KC, Hung YJ, Huang SP, Chen HM, Liao PY, Lin YH, Huang HC, Chiang HC, Yang CI, Zheng YZ, Chu AK, Li HW, Tsai CH, Lu HH, Wang TT, Chang TC. Chen BW, et al. Among authors: chang tc, chang kc. ACS Appl Mater Interfaces. 2017 Apr 5;9(13):11942-11949. doi: 10.1021/acsami.6b14525. Epub 2017 Mar 21. ACS Appl Mater Interfaces. 2017. PMID: 28177598
1,394 results