McClellan CJ - Search Results

1

Ambipolar Thickness-Dependent Thermoelectric Measurements of WSe₂.

Chen V, Lee HR, Köroğlu Ç, McClellan CJ, Daus A, Pop E. Chen V, et al. Among authors: mcclellan cj. Nano Lett. 2023 May 24;23(10):4095-4100. doi: 10.1021/acs.nanolett.2c03468. Epub 2023 May 4. Nano Lett. 2023. PMID: 37141159

2

Rapid Flame Synthesis of Atomically Thin MoO₃ down to Monolayer Thickness for Effective Hole Doping of WSe₂.

Cai L, McClellan CJ, Koh AL, Li H, Yalon E, Pop E, Zheng X. Cai L, et al. Among authors: mcclellan cj. Nano Lett. 2017 Jun 14;17(6):3854-3861. doi: 10.1021/acs.nanolett.7b01322. Epub 2017 Jun 1. Nano Lett. 2017. PMID: 28537732

3

Spatial Separation of Carrier Spin by the Valley Hall Effect in Monolayer WSe₂ Transistors.

Barré E, Incorvia JAC, Kim SH, McClellan CJ, Pop E, Wong HP, Heinz TF. Barré E, et al. Among authors: mcclellan cj. Nano Lett. 2019 Feb 13;19(2):770-774. doi: 10.1021/acs.nanolett.8b03838. Epub 2019 Jan 2. Nano Lett. 2019. PMID: 30601667

4

Energy Dissipation in Monolayer MoS₂ Electronics.

Yalon E, McClellan CJ, Smithe KKH, Muñoz Rojo M, Xu RL, Suryavanshi SV, Gabourie AJ, Neumann CM, Xiong F, Farimani AB, Pop E. Yalon E, et al. Among authors: mcclellan cj. Nano Lett. 2017 Jun 14;17(6):3429-3433. doi: 10.1021/acs.nanolett.7b00252. Epub 2017 May 2. Nano Lett. 2017. PMID: 28388845

5

Unipolar n-Type Black Phosphorus Transistors with Low Work Function Contacts.

Wang CH, Incorvia JAC, McClellan CJ, Yu AC, Mleczko MJ, Pop E, Wong HP. Wang CH, et al. Among authors: mcclellan cj. Nano Lett. 2018 May 9;18(5):2822-2827. doi: 10.1021/acs.nanolett.7b05192. Epub 2018 Apr 12. Nano Lett. 2018. PMID: 29620900

6

Fast Spiking of a Mott VO₂-Carbon Nanotube Composite Device.

Bohaichuk SM, Kumar S, Pitner G, McClellan CJ, Jeong J, Samant MG, Wong HP, Parkin SSP, Williams RS, Pop E. Bohaichuk SM, et al. Among authors: mcclellan cj. Nano Lett. 2019 Oct 9;19(10):6751-6755. doi: 10.1021/acs.nanolett.9b01554. Epub 2019 Aug 28. Nano Lett. 2019. PMID: 31433663

7

High Current Density in Monolayer MoS₂ Doped by AlO_x.

McClellan CJ, Yalon E, Smithe KKH, Suryavanshi SV, Pop E. McClellan CJ, et al. ACS Nano. 2021 Jan 26;15(1):1587-1596. doi: 10.1021/acsnano.0c09078. Epub 2021 Jan 6. ACS Nano. 2021. PMID: 33405894

8

High-Performance p-n Junction Transition Metal Dichalcogenide Photovoltaic Cells Enabled by MoO_x Doping and Passivation.

Nassiri Nazif K, Kumar A, Hong J, Lee N, Islam R, McClellan CJ, Karni O, van de Groep J, Heinz TF, Pop E, Brongersma ML, Saraswat KC. Nassiri Nazif K, et al. Among authors: mcclellan cj. Nano Lett. 2021 Apr 28;21(8):3443-3450. doi: 10.1021/acs.nanolett.1c00015. Epub 2021 Apr 14. Nano Lett. 2021. PMID: 33852295

9

Ultrathin Three-Monolayer Tunneling Memory Selectors.

Wang CH, Chen V, McClellan CJ, Tang A, Vaziri S, Li L, Chen ME, Pop E, Wong HP. Wang CH, et al. Among authors: mcclellan cj. ACS Nano. 2021 May 25;15(5):8484-8491. doi: 10.1021/acsnano.1c00002. Epub 2021 May 4. ACS Nano. 2021. PMID: 33944559

10

Localized Triggering of the Insulator-Metal Transition in VO₂ Using a Single Carbon Nanotube.

Bohaichuk SM, Muñoz Rojo M, Pitner G, McClellan CJ, Lian F, Li J, Jeong J, Samant MG, Parkin SSP, Wong HP, Pop E. Bohaichuk SM, et al. Among authors: mcclellan cj. ACS Nano. 2019 Oct 22;13(10):11070-11077. doi: 10.1021/acsnano.9b03397. Epub 2019 Aug 26. ACS Nano. 2019. PMID: 31393698

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