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Electron Transport Properties in High Electron Mobility Transistor Structures Improved by V-Pit Formation on the AlGaN/GaN Interface.
ACS Appl Mater Interfaces. 2023 Apr 19;15(15):19646-19652. doi: 10.1021/acsami.3c00799. Epub 2023 Apr 6.
ACS Appl Mater Interfaces. 2023.
PMID: 37022802
Free PMC article.
Nanoscale Study of the Hole-Selective Passivating Contacts with High Thermal Budget Using C-AFM Tomography.
Hývl M, Nogay G, Loper P, Haug FJ, Jeangros Q, Fejfar A, Ballif C, Ledinský M.
Hývl M, et al.
ACS Appl Mater Interfaces. 2021 Mar 3;13(8):9994-10000. doi: 10.1021/acsami.0c21282. Epub 2021 Feb 16.
ACS Appl Mater Interfaces. 2021.
PMID: 33591174
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A detailed mechanism of degradation behaviour of biodegradable as-ECAPed Zn-0.8Mg-0.2Sr with emphasis on localized corrosion attack.
Pinc J, Školáková A, Hybášek V, Msallamová Š, Veřtát P, Ashcheulov P, Vondráček M, Duchoň J, McCarroll I, Hývl M, Banerjee S, Drahokoupil J, Kubásek J, Vojtěch D, Čapek J.
Pinc J, et al. Among authors: hyvl m.
Bioact Mater. 2023 Apr 24;27:447-460. doi: 10.1016/j.bioactmat.2023.04.012. eCollection 2023 Sep.
Bioact Mater. 2023.
PMID: 37168023
Free PMC article.
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Nucleation and growth of metal-catalyzed silicon nanowires under plasma.
Hývl M, Müller M, Stuchlíková TH, Stuchlík J, Šilhavík M, Kočka J, Fejfar A, Červenka J.
Hývl M, et al.
Nanotechnology. 2020 May 29;31(22):225601. doi: 10.1088/1361-6528/ab76ef. Epub 2020 Feb 17.
Nanotechnology. 2020.
PMID: 32066127
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