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Resistance Switching Characteristics Induced by O2 Plasma Treatment of an Indium Tin Oxide Film for Use as an Insulator in Resistive Random Access Memory.
Chen PH, Chang TC, Chang KC, Tsai TM, Pan CH, Chen MC, Su YT, Lin CY, Tseng YT, Huang HC, Wu H, Deng N, Qian H, Sze SM. Chen PH, et al. Among authors: huang hc. ACS Appl Mater Interfaces. 2017 Jan 25;9(3):3149-3155. doi: 10.1021/acsami.6b14282. Epub 2017 Jan 10. ACS Appl Mater Interfaces. 2017. PMID: 28072511
Enhanced Ferromagnetic Interaction in Modulation-Doped GaMnN Nanorods.
Lin YT, Wadekar PV, Kao HS, Zheng YJ, Chen QY, Huang HC, Cheng CM, Ho NJ, Tu LW. Lin YT, et al. Among authors: huang hc. Nanoscale Res Lett. 2017 Dec;12(1):287. doi: 10.1186/s11671-017-2061-5. Epub 2017 Apr 20. Nanoscale Res Lett. 2017. PMID: 28431463 Free PMC article.
Adaptive Synaptic Memory via Lithium Ion Modulation in RRAM Devices.
Lin CY, Chen J, Chen PH, Chang TC, Wu Y, Eshraghian JK, Moon J, Yoo S, Wang YH, Chen WC, Wang ZY, Huang HC, Li Y, Miao X, Lu WD, Sze SM. Lin CY, et al. Among authors: huang hc. Small. 2020 Oct;16(42):e2003964. doi: 10.1002/smll.202003964. Epub 2020 Sep 29. Small. 2020. PMID: 32996256
1,798 results