A Novel Atomic-Level Post-Etch-Surface-Reinforcement Process for High-Performance p-GaN Gate HEMTs Fabrication.
Wang L, Zhang P, Zhu K, Wang Q, Pan M, Sun X, Huang Z, Chen K, Yang Y, Xie X, Huang H, Hu X, Xu S, Wu C, Wang C, Xu M, Zhang DW.
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Nanomaterials (Basel). 2023 Aug 8;13(16):2275. doi: 10.3390/nano13162275.
Nanomaterials (Basel). 2023.
PMID: 37630860
Free PMC article.