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Retention Improvement of HZO-Based Ferroelectric Capacitors with TiO2 Insets.
ACS Omega. 2022 Dec 7;7(50):47084-47095. doi: 10.1021/acsomega.2c06237. eCollection 2022 Dec 20.
ACS Omega. 2022.
PMID: 36570284
Free PMC article.
On-Chip TaO x -Based Non-volatile Resistive Memory for in vitro Neurointerfaces.
Zhuk M, Zarubin S, Karateev I, Matveyev Y, Gornev E, Krasnikov G, Negrov D, Zenkevich A.
Zhuk M, et al.
Front Neurosci. 2020 Feb 26;14:94. doi: 10.3389/fnins.2020.00094. eCollection 2020.
Front Neurosci. 2020.
PMID: 32174805
Free PMC article.
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Effect of Domain Structure and Dielectric Interlayer on Switching Speed of Ferroelectric Hf0.5Zr0.5O2 Film.
Chouprik A, Savelyeva E, Korostylev E, Kondratyuk E, Zarubin S, Sizykh N, Zhuk M, Zenkevich A, Markeev AM, Kondratev O, Yakunin S.
Chouprik A, et al.
Nanomaterials (Basel). 2023 Dec 1;13(23):3063. doi: 10.3390/nano13233063.
Nanomaterials (Basel). 2023.
PMID: 38063759
Free PMC article.
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