Markeev AM - Search Results

1

Retention Improvement of HZO-Based Ferroelectric Capacitors with TiO₂ Insets.

Koroleva AA, Chernikova AG, Zarubin SS, Korostylev E, Khakimov RR, Zhuk MY, Markeev AM. Koroleva AA, et al. Among authors: markeev am. ACS Omega. 2022 Dec 7;7(50):47084-47095. doi: 10.1021/acsomega.2c06237. eCollection 2022 Dec 20. ACS Omega. 2022. PMID: 36570284 Free PMC article.

2

Improved Ferroelectric Switching Endurance of La-Doped Hf_0.5Zr_0.5O₂ Thin Films.

Chernikova AG, Kozodaev MG, Negrov DV, Korostylev EV, Park MH, Schroeder U, Hwang CS, Markeev AM. Chernikova AG, et al. Among authors: markeev am. ACS Appl Mater Interfaces. 2018 Jan 24;10(3):2701-2708. doi: 10.1021/acsami.7b15110. Epub 2018 Jan 9. ACS Appl Mater Interfaces. 2018. PMID: 29282976

3

Ferroelectric Second-Order Memristor.

Mikheev V, Chouprik A, Lebedinskii Y, Zarubin S, Matveyev Y, Kondratyuk E, Kozodaev MG, Markeev AM, Zenkevich A, Negrov D. Mikheev V, et al. Among authors: markeev am. ACS Appl Mater Interfaces. 2019 Sep 4;11(35):32108-32114. doi: 10.1021/acsami.9b08189. Epub 2019 Aug 26. ACS Appl Mater Interfaces. 2019. PMID: 31402643

4

Temperature controlled Ru and RuO₂ growth via O^* radical-enhanced atomic layer deposition with Ru(EtCp)₂.

Kozodaev MG, Lebedinskii YY, Chernikova AG, Korostylev EV, Chouprik AA, Khakimov RR, Markeev AM, Hwang CS. Kozodaev MG, et al. Among authors: markeev am. J Chem Phys. 2019 Nov 28;151(20):204701. doi: 10.1063/1.5107509. J Chem Phys. 2019. PMID: 31779314

5

Memristor with a ferroelectric HfO₂ layer: in which case it is a ferroelectric tunnel junction.

Mikheev V, Chouprik A, Lebedinskii Y, Zarubin S, Markeev AM, Zenkevich AV, Negrov D. Mikheev V, et al. Among authors: markeev am. Nanotechnology. 2020 Feb 10;31(21):215205. doi: 10.1088/1361-6528/ab746d. Online ahead of print. Nanotechnology. 2020. PMID: 32040945

6

Impact of the Atomic Layer-Deposited Ru Electrode Surface Morphology on Resistive Switching Properties of TaO_x-Based Memory Structures.

Koroleva AA, Chernikova AG, Chouprik AA, Gornev ES, Slavich AS, Khakimov RR, Korostylev EV, Hwang CS, Markeev AM. Koroleva AA, et al. Among authors: markeev am. ACS Appl Mater Interfaces. 2020 Dec 9;12(49):55331-55341. doi: 10.1021/acsami.0c14810. Epub 2020 Nov 15. ACS Appl Mater Interfaces. 2020. PMID: 33190485

7

Thickness-Dependent Structural and Electrical Properties of WS₂ Nanosheets Obtained via the ALD-Grown WO₃ Sulfurization Technique as a Channel Material for Field-Effect Transistors.

Romanov RI, Kozodaev MG, Chernikova AG, Zabrosaev IV, Chouprik AA, Zarubin SS, Novikov SM, Volkov VS, Markeev AM. Romanov RI, et al. Among authors: markeev am. ACS Omega. 2021 Dec 9;6(50):34429-34437. doi: 10.1021/acsomega.1c04532. eCollection 2021 Dec 21. ACS Omega. 2021. PMID: 34963928 Free PMC article.

8

On the Reliability of HZO-Based Ferroelectric Capacitors: The Cases of Ru and TiN Electrodes.

Khakimov RR, Chernikova AG, Koroleva AA, Markeev AM. Khakimov RR, et al. Among authors: markeev am. Nanomaterials (Basel). 2022 Sep 3;12(17):3059. doi: 10.3390/nano12173059. Nanomaterials (Basel). 2022. PMID: 36080096 Free PMC article.

9

Field-Effect Transistor Based on 2D Microcrystalline MoS₂ Film Grown by Sulfurization of Atomically Layer Deposited MoO₃.

Zabrosaev IV, Kozodaev MG, Romanov RI, Chernikova AG, Mishra P, Doroshina NV, Arsenin AV, Volkov VS, Koroleva AA, Markeev AM. Zabrosaev IV, et al. Among authors: markeev am. Nanomaterials (Basel). 2022 Sep 20;12(19):3262. doi: 10.3390/nano12193262. Nanomaterials (Basel). 2022. PMID: 36234390 Free PMC article.

10

Stabilization of the Nano-Sized 1T Phase through Rhenium Doping in the Metal-Organic CVD MoS₂ Films.

Romanov RI, Zabrosaev IV, Kozodaev MG, Yakubovsky DI, Tatmyshevskiy MK, Timofeev AA, Doroshina NV, Novikov SM, Volkov VS, Markeev AM. Romanov RI, et al. Among authors: markeev am. ACS Omega. 2023 May 3;8(19):16579-16586. doi: 10.1021/acsomega.2c06794. eCollection 2023 May 16. ACS Omega. 2023. PMID: 37214699 Free PMC article.

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