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Retention Improvement of HZO-Based Ferroelectric Capacitors with TiO2 Insets.
ACS Omega. 2022 Dec 7;7(50):47084-47095. doi: 10.1021/acsomega.2c06237. eCollection 2022 Dec 20.
ACS Omega. 2022.
PMID: 36570284
Free PMC article.
On the Reliability of HZO-Based Ferroelectric Capacitors: The Cases of Ru and TiN Electrodes.
Khakimov RR, Chernikova AG, Koroleva AA, Markeev AM.
Khakimov RR, et al.
Nanomaterials (Basel). 2022 Sep 3;12(17):3059. doi: 10.3390/nano12173059.
Nanomaterials (Basel). 2022.
PMID: 36080096
Free PMC article.
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Impact of the Atomic Layer-Deposited Ru Electrode Surface Morphology on Resistive Switching Properties of TaOx-Based Memory Structures.
Koroleva AA, Chernikova AG, Chouprik AA, Gornev ES, Slavich AS, Khakimov RR, Korostylev EV, Hwang CS, Markeev AM.
Koroleva AA, et al. Among authors: khakimov rr.
ACS Appl Mater Interfaces. 2020 Dec 9;12(49):55331-55341. doi: 10.1021/acsami.0c14810. Epub 2020 Nov 15.
ACS Appl Mater Interfaces. 2020.
PMID: 33190485
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Temperature controlled Ru and RuO2 growth via O* radical-enhanced atomic layer deposition with Ru(EtCp)2.
Kozodaev MG, Lebedinskii YY, Chernikova AG, Korostylev EV, Chouprik AA, Khakimov RR, Markeev AM, Hwang CS.
Kozodaev MG, et al. Among authors: khakimov rr.
J Chem Phys. 2019 Nov 28;151(20):204701. doi: 10.1063/1.5107509.
J Chem Phys. 2019.
PMID: 31779314
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