Chernikova AG - Search Results

1

Retention Improvement of HZO-Based Ferroelectric Capacitors with TiO₂ Insets.

Koroleva AA, Chernikova AG, Zarubin SS, Korostylev E, Khakimov RR, Zhuk MY, Markeev AM. Koroleva AA, et al. Among authors: chernikova ag. ACS Omega. 2022 Dec 7;7(50):47084-47095. doi: 10.1021/acsomega.2c06237. eCollection 2022 Dec 20. ACS Omega. 2022. PMID: 36570284 Free PMC article.

2

On the Reliability of HZO-Based Ferroelectric Capacitors: The Cases of Ru and TiN Electrodes.

Khakimov RR, Chernikova AG, Koroleva AA, Markeev AM. Khakimov RR, et al. Among authors: chernikova ag. Nanomaterials (Basel). 2022 Sep 3;12(17):3059. doi: 10.3390/nano12173059. Nanomaterials (Basel). 2022. PMID: 36080096 Free PMC article.

3

Improved Ferroelectric Switching Endurance of La-Doped Hf_0.5Zr_0.5O₂ Thin Films.

Chernikova AG, Kozodaev MG, Negrov DV, Korostylev EV, Park MH, Schroeder U, Hwang CS, Markeev AM. Chernikova AG, et al. ACS Appl Mater Interfaces. 2018 Jan 24;10(3):2701-2708. doi: 10.1021/acsami.7b15110. Epub 2018 Jan 9. ACS Appl Mater Interfaces. 2018. PMID: 29282976

4

Impact of the Atomic Layer-Deposited Ru Electrode Surface Morphology on Resistive Switching Properties of TaO_x-Based Memory Structures.

Koroleva AA, Chernikova AG, Chouprik AA, Gornev ES, Slavich AS, Khakimov RR, Korostylev EV, Hwang CS, Markeev AM. Koroleva AA, et al. Among authors: chernikova ag. ACS Appl Mater Interfaces. 2020 Dec 9;12(49):55331-55341. doi: 10.1021/acsami.0c14810. Epub 2020 Nov 15. ACS Appl Mater Interfaces. 2020. PMID: 33190485

5

Thickness-Dependent Structural and Electrical Properties of WS₂ Nanosheets Obtained via the ALD-Grown WO₃ Sulfurization Technique as a Channel Material for Field-Effect Transistors.

Romanov RI, Kozodaev MG, Chernikova AG, Zabrosaev IV, Chouprik AA, Zarubin SS, Novikov SM, Volkov VS, Markeev AM. Romanov RI, et al. Among authors: chernikova ag. ACS Omega. 2021 Dec 9;6(50):34429-34437. doi: 10.1021/acsomega.1c04532. eCollection 2021 Dec 21. ACS Omega. 2021. PMID: 34963928 Free PMC article.

6

Ultrathin Hf0.5Zr0.5O2 Ferroelectric Films on Si.

Chernikova A, Kozodaev M, Markeev A, Negrov D, Spiridonov M, Zarubin S, Bak O, Buragohain P, Lu H, Suvorova E, Gruverman A, Zenkevich A. Chernikova A, et al. ACS Appl Mater Interfaces. 2016 Mar 23;8(11):7232-7. doi: 10.1021/acsami.5b11653. Epub 2016 Mar 14. ACS Appl Mater Interfaces. 2016. PMID: 26931409

7

Effect of Polarization Reversal in Ferroelectric TiN/Hf_0.5Zr_0.5O₂/TiN Devices on Electronic Conditions at Interfaces Studied in Operando by Hard X-ray Photoemission Spectroscopy.

Matveyev Y, Negrov D, Chernikova A, Lebedinskii Y, Kirtaev R, Zarubin S, Suvorova E, Gloskovskii A, Zenkevich A. Matveyev Y, et al. ACS Appl Mater Interfaces. 2017 Dec 13;9(49):43370-43376. doi: 10.1021/acsami.7b14369. Epub 2017 Nov 30. ACS Appl Mater Interfaces. 2017. PMID: 29160064

8

Ferroelectricity in Hf_0.5Zr_0.5O₂ Thin Films: A Microscopic Study of the Polarization Switching Phenomenon and Field-Induced Phase Transformations.

Chouprik A, Zakharchenko S, Spiridonov M, Zarubin S, Chernikova A, Kirtaev R, Buragohain P, Gruverman A, Zenkevich A, Negrov D. Chouprik A, et al. ACS Appl Mater Interfaces. 2018 Mar 14;10(10):8818-8826. doi: 10.1021/acsami.7b17482. Epub 2018 Mar 5. ACS Appl Mater Interfaces. 2018. PMID: 29464951

9

Temperature controlled Ru and RuO₂ growth via O^* radical-enhanced atomic layer deposition with Ru(EtCp)₂.

Kozodaev MG, Lebedinskii YY, Chernikova AG, Korostylev EV, Chouprik AA, Khakimov RR, Markeev AM, Hwang CS. Kozodaev MG, et al. Among authors: chernikova ag. J Chem Phys. 2019 Nov 28;151(20):204701. doi: 10.1063/1.5107509. J Chem Phys. 2019. PMID: 31779314

10

Field-Effect Transistor Based on 2D Microcrystalline MoS₂ Film Grown by Sulfurization of Atomically Layer Deposited MoO₃.

Zabrosaev IV, Kozodaev MG, Romanov RI, Chernikova AG, Mishra P, Doroshina NV, Arsenin AV, Volkov VS, Koroleva AA, Markeev AM. Zabrosaev IV, et al. Among authors: chernikova ag. Nanomaterials (Basel). 2022 Sep 20;12(19):3262. doi: 10.3390/nano12193262. Nanomaterials (Basel). 2022. PMID: 36234390 Free PMC article.

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