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Nanometer-Thick Oxide Semiconductor Transistor with Ultra-High Drain Current.
Lin Z, Si M, Askarpour V, Niu C, Charnas A, Shang Z, Zhang Y, Hu Y, Zhang Z, Liao PY, Cho K, Wang H, Lundstrom M, Maassen J, Ye PD. Lin Z, et al. Among authors: cho k. ACS Nano. 2022 Dec 27;16(12):21536-21545. doi: 10.1021/acsnano.2c10383. Epub 2022 Nov 29. ACS Nano. 2022. PMID: 36446079
Metal contacts on physical vapor deposited monolayer MoS2.
Gong C, Huang C, Miller J, Cheng L, Hao Y, Cobden D, Kim J, Ruoff RS, Wallace RM, Cho K, Xu X, Chabal YJ. Gong C, et al. Among authors: cho k. ACS Nano. 2013 Dec 23;7(12):11350-7. doi: 10.1021/nn4052138. Epub 2013 Nov 14. ACS Nano. 2013. PMID: 24219632
Realistic metal-graphene contact structures.
Gong C, McDonnell S, Qin X, Azcatl A, Dong H, Chabal YJ, Cho K, Wallace RM. Gong C, et al. Among authors: cho k. ACS Nano. 2014 Jan 28;8(1):642-9. doi: 10.1021/nn405249n. Epub 2013 Nov 26. ACS Nano. 2014. PMID: 24261695
Air stable p-doping of WSe2 by covalent functionalization.
Zhao P, Kiriya D, Azcatl A, Zhang C, Tosun M, Liu YS, Hettick M, Kang JS, McDonnell S, Santosh KC, Guo J, Cho K, Wallace RM, Javey A. Zhao P, et al. Among authors: cho k. ACS Nano. 2014 Oct 28;8(10):10808-14. doi: 10.1021/nn5047844. Epub 2014 Sep 22. ACS Nano. 2014. PMID: 25229426
Origin of Indium Diffusion in High-k Oxide HfO2.
Hu Y, Wang C, Dong H, Wallace RM, Cho K, Wang WH, Wang W. Hu Y, et al. Among authors: cho k. ACS Appl Mater Interfaces. 2016 Mar 23;8(11):7595-600. doi: 10.1021/acsami.6b01068. Epub 2016 Mar 10. ACS Appl Mater Interfaces. 2016. PMID: 26939534
Planar Vacancies in Sn1-xBixTe Nanoribbons.
Zou YC, Chen ZG, Kong F, Lin J, Drennan J, Cho K, Wang Z, Zou J. Zou YC, et al. Among authors: cho k. ACS Nano. 2016 May 24;10(5):5507-15. doi: 10.1021/acsnano.6b01953. Epub 2016 Apr 28. ACS Nano. 2016. PMID: 27116636
9,573 results