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Ferromagnetism modulation by ultralow current in a two-dimensional polycrystalline molybdenum disulphide atomic layered structure.
Sci Rep. 2022 Oct 13;12(1):17199. doi: 10.1038/s41598-022-22113-3.
Sci Rep. 2022.
PMID: 36229486
Free PMC article.
Valence-band structure of the ferromagnetic semiconductor GaMnAs studied by spin-dependent resonant tunneling spectroscopy.
Ohya S, Muneta I, Hai PN, Tanaka M.
Ohya S, et al. Among authors: muneta i.
Phys Rev Lett. 2010 Apr 23;104(16):167204. doi: 10.1103/PhysRevLett.104.167204. Epub 2010 Apr 22.
Phys Rev Lett. 2010.
PMID: 20482079
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Artificial control of the bias-voltage dependence of tunnelling-anisotropic magnetoresistance using quantization in a single-crystal ferromagnet.
Muneta I, Kanaki T, Ohya S, Tanaka M.
Muneta I, et al.
Nat Commun. 2017 May 22;8:15387. doi: 10.1038/ncomms15387.
Nat Commun. 2017.
PMID: 28530233
Free PMC article.
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Sudden restoration of the band ordering associated with the ferromagnetic phase transition in a semiconductor.
Muneta I, Ohya S, Terada H, Tanaka M.
Muneta I, et al.
Nat Commun. 2016 Jun 28;7:12013. doi: 10.1038/ncomms12013.
Nat Commun. 2016.
PMID: 27349454
Free PMC article.
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Control of anisotropy of a redox-active molecule-based film leads to non-volatile resistive switching memory.
Kim J, Ohtsu H, Den T, Deekamwong K, Muneta I, Kawano M.
Kim J, et al. Among authors: muneta i.
Chem Sci. 2019 Oct 17;10(47):10888-10893. doi: 10.1039/c9sc04213j. eCollection 2019 Dec 21.
Chem Sci. 2019.
PMID: 32190244
Free PMC article.
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