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Self-Forming p-n Junction Diode Realized with WSe2 Surface and Edge Dual Contacts.
Small. 2022 Nov;18(46):e2204547. doi: 10.1002/smll.202204547. Epub 2022 Oct 10.
Small. 2022.
PMID: 36216594
Enhanced Performance of WS2 Field-Effect Transistor through Mono and Bilayer h-BN Tunneling Contacts.
Phan NAN, Noh H, Kim J, Kim Y, Kim H, Whang D, Aoki N, Watanabe K, Taniguchi T, Kim GH.
Phan NAN, et al.
Small. 2022 Apr;18(13):e2105753. doi: 10.1002/smll.202105753. Epub 2022 Feb 3.
Small. 2022.
PMID: 35112797
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Doping-Free High-Performance Photovoltaic Effect in a WSe2 Lateral p-n Homojunction Formed by Contact Engineering.
Le Thi HY, Ngo TD, Phan NAN, Shin H, Uddin I, Venkatesan A, Liang CT, Aoki N, Yoo WJ, Watanabe K, Taniguchi T, Kim GH.
Le Thi HY, et al. Among authors: phan nan.
ACS Appl Mater Interfaces. 2023 Jul 26;15(29):35342-35349. doi: 10.1021/acsami.3c05451. Epub 2023 Jul 13.
ACS Appl Mater Interfaces. 2023.
PMID: 37442799
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