Niquet YM - Search Results

1

Bilinear Magnetoresistance in HgTe Topological Insulator: Opposite Signs at Opposite Surfaces Demonstrated by Gate Control.

Fu Y, Li J, Papin J, Noël P, Teresi S, Cosset-Chéneau M, Grezes C, Guillet T, Thomas C, Niquet YM, Ballet P, Meunier T, Attané JP, Fert A, Vila L. Fu Y, et al. Among authors: niquet ym. Nano Lett. 2022 Oct 12;22(19):7867-7873. doi: 10.1021/acs.nanolett.2c02585. Epub 2022 Sep 22. Nano Lett. 2022. PMID: 36136339

2

Quantum dot made in metal oxide silicon-nanowire field effect transistor working at room temperature.

Lavieville R, Triozon F, Barraud S, Corna A, Jehl X, Sanquer M, Li J, Abisset A, Duchemin I, Niquet YM. Lavieville R, et al. Among authors: niquet ym. Nano Lett. 2015 May 13;15(5):2958-64. doi: 10.1021/nl504806s. Epub 2015 May 4. Nano Lett. 2015. PMID: 25923197

3

Magnetic-Phase Dependence of the Spin Carrier Mean Free Path in Graphene Nanoribbons.

Li J, Niquet YM, Delerue C. Li J, et al. Among authors: niquet ym. Phys Rev Lett. 2016 Jun 10;116(23):236602. doi: 10.1103/PhysRevLett.116.236602. Epub 2016 Jun 8. Phys Rev Lett. 2016. PMID: 27341249

4

Split-Channel Ballistic Transport in an InSb Nanowire.

Estrada Saldaña JC, Niquet YM, Cleuziou JP, Lee EJH, Car D, Plissard SR, Bakkers EPAM, De Franceschi S. Estrada Saldaña JC, et al. Among authors: niquet ym. Nano Lett. 2018 Apr 11;18(4):2282-2287. doi: 10.1021/acs.nanolett.7b03854. Epub 2018 Mar 7. Nano Lett. 2018. PMID: 29513545

5

Hole-Spin Driving by Strain-Induced Spin-Orbit Interactions.

Abadillo-Uriel JC, Rodríguez-Mena EA, Martinez B, Niquet YM. Abadillo-Uriel JC, et al. Among authors: niquet ym. Phys Rev Lett. 2023 Sep 1;131(9):097002. doi: 10.1103/PhysRevLett.131.097002. Phys Rev Lett. 2023. PMID: 37721821

6

Effects of a shell on the electronic properties of nanowire superlattices.

Niquet YM. Niquet YM. Nano Lett. 2007 Apr;7(4):1105-9. doi: 10.1021/nl0629097. Epub 2007 Mar 27. Nano Lett. 2007. PMID: 17385931

7

Orientational dependence of charge transport in disordered silicon nanowires.

Persson MP, Lherbier A, Niquet YM, Triozon F, Roche S. Persson MP, et al. Among authors: niquet ym. Nano Lett. 2008 Dec;8(12):4146-50. doi: 10.1021/nl801128f. Nano Lett. 2008. PMID: 19367959

8

Effects of strain on the carrier mobility in silicon nanowires.

Niquet YM, Delerue C, Krzeminski C. Niquet YM, et al. Nano Lett. 2012 Jul 11;12(7):3545-50. doi: 10.1021/nl3010995. Epub 2012 Jun 18. Nano Lett. 2012. PMID: 22694664

9

Few-electron edge-state quantum dots in a silicon nanowire field-effect transistor.

Voisin B, Nguyen VH, Renard J, Jehl X, Barraud S, Triozon F, Vinet M, Duchemin I, Niquet YM, de Franceschi S, Sanquer M. Voisin B, et al. Among authors: niquet ym. Nano Lett. 2014;14(4):2094-8. doi: 10.1021/nl500299h. Epub 2014 Mar 14. Nano Lett. 2014. PMID: 24611581

10

Determination of the Optimal Shell Thickness for Self-Catalyzed GaAs/AlGaAs Core-Shell Nanowires on Silicon.

Songmuang R, Giang le TT, Bleuse J, Den Hertog M, Niquet YM, Dang le S, Mariette H. Songmuang R, et al. Among authors: niquet ym. Nano Lett. 2016 Jun 8;16(6):3426-33. doi: 10.1021/acs.nanolett.5b03917. Epub 2016 May 13. Nano Lett. 2016. PMID: 27081785

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