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Revival of Ferroelectric Memories Based on Emerging Fluorite-Structured Ferroelectrics.
Adv Mater. 2023 Oct;35(43):e2204904. doi: 10.1002/adma.202204904. Epub 2023 Mar 11.
Adv Mater. 2023.
PMID: 35952355
Review.
Progress, Challenges, and Opportunities in Oxide Semiconductor Devices: A Key Building Block for Applications Ranging from Display Backplanes to 3D Integrated Semiconductor Chips.
Kim T, Choi CH, Hur JS, Ha D, Kuh BJ, Kim Y, Cho MH, Kim S, Jeong JK.
Kim T, et al. Among authors: kuh bj.
Adv Mater. 2023 Oct;35(43):e2204663. doi: 10.1002/adma.202204663. Epub 2023 Jan 10.
Adv Mater. 2023.
PMID: 35862931
Review.
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High-Performance Thin-Film Transistor with Atomic Layer Deposition (ALD)-Derived Indium-Gallium Oxide Channel for Back-End-of-Line Compatible Transistor Applications: Cation Combinatorial Approach.
Hur JS, Kim MJ, Yoon SH, Choi H, Park CK, Lee SH, Cho MH, Kuh BJ, Jeong JK.
Hur JS, et al. Among authors: kuh bj.
ACS Appl Mater Interfaces. 2022 Nov 2;14(43):48857-48867. doi: 10.1021/acsami.2c13489. Epub 2022 Oct 19.
ACS Appl Mater Interfaces. 2022.
PMID: 36259658
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Selectively Nitrogen Doped ALD-IGZO TFTs with Extremely High Mobility and Reliability.
Kim DG, Choi H, Kim YS, Lee DH, Oh HJ, Lee JH, Kim J, Lee S, Kuh B, Kim T, Kim HY, Park JS.
Kim DG, et al.
ACS Appl Mater Interfaces. 2023 Jul 5;15(26):31652-31663. doi: 10.1021/acsami.3c05678. Epub 2023 Jun 22.
ACS Appl Mater Interfaces. 2023.
PMID: 37350067
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Thermally Activated Defect Engineering for Highly Stable and Uniform ALD-Amorphous IGZO TFTs with High-Temperature Compatibility.
Kim DG, Lee WB, Lee S, Koh J, Kuh B, Park JS.
Kim DG, et al.
ACS Appl Mater Interfaces. 2023 Aug 2;15(30):36550-36563. doi: 10.1021/acsami.3c06517. Epub 2023 Jul 25.
ACS Appl Mater Interfaces. 2023.
PMID: 37489641
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Specific contact resistivity reduction in amorphous IGZO thin-film transistors through a TiN/IGTO heterogeneous interlayer.
Jeong JH, Seo SW, Kim D, Yoon SH, Lee SH, Kuh BJ, Kim T, Jeong JK.
Jeong JH, et al. Among authors: kuh bj.
Sci Rep. 2024 May 13;14(1):10953. doi: 10.1038/s41598-024-61837-2.
Sci Rep. 2024.
PMID: 38740958
Free PMC article.
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Germanium p-i-n avalanche photodetector fabricated by point defect healing process.
Shim J, Kang DH, Yoo G, Hong ST, Jung WS, Kuh BJ, Lee B, Shin D, Ha K, Kim GS, Yu HY, Baek J, Park JH.
Shim J, et al. Among authors: kuh bj.
Opt Lett. 2014 Jul 15;39(14):4204-7. doi: 10.1364/OL.39.004204.
Opt Lett. 2014.
PMID: 25121687
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