Heo J - Search Results

1

Revival of Ferroelectric Memories Based on Emerging Fluorite-Structured Ferroelectrics.

Park JY, Choe DH, Lee DH, Yu GT, Yang K, Kim SH, Park GH, Nam SG, Lee HJ, Jo S, Kuh BJ, Ha D, Kim Y, Heo J, Park MH. Park JY, et al. Among authors: heo j. Adv Mater. 2023 Oct;35(43):e2204904. doi: 10.1002/adma.202204904. Epub 2023 Mar 11. Adv Mater. 2023. PMID: 35952355 Review.

2

Unveiling the Origin of Robust Ferroelectricity in Sub-2 nm Hafnium Zirconium Oxide Films.

Lee H, Choe DH, Jo S, Kim JH, Lee HH, Shin HJ, Park Y, Kang S, Cho Y, Park S, Moon T, Eom D, Leem M, Kim Y, Heo J, Lee E, Kim H. Lee H, et al. Among authors: heo j. ACS Appl Mater Interfaces. 2021 Aug 4;13(30):36499-36506. doi: 10.1021/acsami.1c08718. Epub 2021 Jul 26. ACS Appl Mater Interfaces. 2021. PMID: 34310129

3

Highly enhanced ferroelectricity in HfO₂-based ferroelectric thin film by light ion bombardment.

Kang S, Jang WS, Morozovska AN, Kwon O, Jin Y, Kim YH, Bae H, Wang C, Yang SH, Belianinov A, Randolph S, Eliseev EA, Collins L, Park Y, Jo S, Jung MH, Go KJ, Cho HW, Choi SY, Jang JH, Kim S, Jeong HY, Lee J, Ovchinnikova OS, Heo J, Kalinin SV, Kim YM, Kim Y. Kang S, et al. Among authors: heo j. Science. 2022 May 13;376(6594):731-738. doi: 10.1126/science.abk3195. Epub 2022 May 12. Science. 2022. PMID: 35549417

4

Reconfigurable van der Waals Heterostructured Devices with Metal-Insulator Transition.

Heo J, Jeong H, Cho Y, Lee J, Lee K, Nam S, Lee EK, Lee S, Lee H, Hwang S, Park S. Heo J, et al. Nano Lett. 2016 Nov 9;16(11):6746-6754. doi: 10.1021/acs.nanolett.6b02199. Epub 2016 Oct 5. Nano Lett. 2016. PMID: 27704847

5

Quantitative Local Probing of Polarization with Application on HfO₂ -Based Thin Films.

Kwon O, Kang S, Jo S, Kim YD, Han H, Park Y, Lu X, Lee W, Heo J, Alexe M, Kim Y. Kwon O, et al. Among authors: heo j. Small Methods. 2021 Nov;5(11):e2100781. doi: 10.1002/smtd.202100781. Epub 2021 Oct 7. Small Methods. 2021. PMID: 34927955

6

Characterization of Edge Contact: Atomically Resolved Semiconductor-Metal Lateral Boundary in MoS₂.

Kwon H, Lee K, Heo J, Oh Y, Lee H, Appalakondaiah S, Ko W, Kim HW, Jung JW, Suh H, Min H, Jeon I, Hwang E, Hwang S. Kwon H, et al. Among authors: heo j. Adv Mater. 2017 Nov;29(41). doi: 10.1002/adma.201702931. Epub 2017 Sep 18. Adv Mater. 2017. PMID: 28922484

7

Ultrathin ferroic HfO₂-ZrO₂ superlattice gate stack for advanced transistors.

Cheema SS, Shanker N, Wang LC, Hsu CH, Hsu SL, Liao YH, San Jose M, Gomez J, Chakraborty W, Li W, Bae JH, Volkman SK, Kwon D, Rho Y, Pinelli G, Rastogi R, Pipitone D, Stull C, Cook M, Tyrrell B, Stoica VA, Zhang Z, Freeland JW, Tassone CJ, Mehta A, Saheli G, Thompson D, Suh DI, Koo WT, Nam KJ, Jung DJ, Song WB, Lin CH, Nam S, Heo J, Parihar N, Grigoropoulos CP, Shafer P, Fay P, Ramesh R, Mahapatra S, Ciston J, Datta S, Mohamed M, Hu C, Salahuddin S. Cheema SS, et al. Among authors: heo j. Nature. 2022 Apr;604(7904):65-71. doi: 10.1038/s41586-022-04425-6. Epub 2022 Apr 6. Nature. 2022. PMID: 35388197

8

Mobility Engineering in Vertical Field Effect Transistors Based on Van der Waals Heterostructures.

Shin YS, Lee K, Kim YR, Lee H, Lee IM, Kang WT, Lee BH, Kim K, Heo J, Park S, Lee YH, Yu WJ. Shin YS, et al. Among authors: heo j. Adv Mater. 2018 Mar;30(9). doi: 10.1002/adma.201704435. Epub 2018 Jan 15. Adv Mater. 2018. PMID: 29333683

9

Tension assisted metal transfer of graphene for Schottky diodes onto wafer scale substrates.

Lee J, Lee SC, Kim Y, Heo J, Lee K, Lee D, Kim J, Lee S, Lee CS, Nam MS, Jun SC. Lee J, et al. Among authors: heo j. Nanotechnology. 2016 Feb 19;27(7):075303. doi: 10.1088/0957-4484/27/7/075303. Epub 2016 Jan 20. Nanotechnology. 2016. PMID: 26789103

10

Graphene for true Ohmic contact at metal-semiconductor junctions.

Byun KE, Chung HJ, Lee J, Yang H, Song HJ, Heo J, Seo DH, Park S, Hwang SW, Yoo I, Kim K. Byun KE, et al. Among authors: heo j. Nano Lett. 2013 Sep 11;13(9):4001-5. doi: 10.1021/nl402367y. Epub 2013 Aug 30. Nano Lett. 2013. PMID: 23978262

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