Eom J - Search Results

1

Tunable spin injection and detection across a van der Waals interface.

Min KH, Lee DH, Choi SJ, Lee IH, Seo J, Kim DW, Ko KT, Watanabe K, Taniguchi T, Ha DH, Kim C, Shim JH, Eom J, Kim JS, Jung S. Min KH, et al. Among authors: eom j. Nat Mater. 2022 Oct;21(10):1144-1149. doi: 10.1038/s41563-022-01320-3. Epub 2022 Aug 4. Nat Mater. 2022. PMID: 35927432

2

Layer dependent magnetoresistance of vertical MoS₂ magnetic tunnel junctions.

Khan MF , Kim H , Nazir G , Jung S , Eom J . Khan MF , et al. Among authors: eom j. Nanoscale. 2018 Sep 13;10(35):16703-16710. doi: 10.1039/c8nr04518f. Nanoscale. 2018. PMID: 30155548

3

Ultimate limit in size and performance of WSe₂ vertical diodes.

Nazir G, Kim H, Kim J, Kim KS, Shin DH, Khan MF, Lee DS, Hwang JY, Hwang C, Suh J, Eom J, Jung S. Nazir G, et al. Among authors: eom j. Nat Commun. 2018 Dec 18;9(1):5371. doi: 10.1038/s41467-018-07820-8. Nat Commun. 2018. PMID: 30560877 Free PMC article.

4

Negative magnetoresistance in a vertical single-layer graphene spin valve at room temperature.

Singh AK, Eom J. Singh AK, et al. Among authors: eom j. ACS Appl Mater Interfaces. 2014 Feb 26;6(4):2493-6. doi: 10.1021/am4049145. Epub 2014 Feb 14. ACS Appl Mater Interfaces. 2014. PMID: 24495123

5

Highly Stable and Tunable Chemical Doping of Multilayer WS2 Field Effect Transistor: Reduction in Contact Resistance.

Khalil HM, Khan MF, Eom J, Noh H. Khalil HM, et al. Among authors: eom j. ACS Appl Mater Interfaces. 2015 Oct 28;7(42):23589-96. doi: 10.1021/acsami.5b06825. Epub 2015 Oct 13. ACS Appl Mater Interfaces. 2015. PMID: 26434774

6

Low-Voltage and High-Performance Multilayer MoS₂ Field-Effect Transistors with Graphene Electrodes.

Singh AK, Hwang C, Eom J. Singh AK, et al. Among authors: eom j. ACS Appl Mater Interfaces. 2016 Dec 21;8(50):34699-34705. doi: 10.1021/acsami.6b12217. Epub 2016 Dec 7. ACS Appl Mater Interfaces. 2016. PMID: 27998114

7

Van der Waals heterojunction diode composed of WS₂ flake placed on p-type Si substrate.

Aftab S, Khan MF, Min KA, Nazir G, Afzal AM, Dastgeer G, Akhtar I, Seo Y, Hong S, Eom J. Aftab S, et al. Among authors: eom j. Nanotechnology. 2018 Jan 26;29(4):045201. doi: 10.1088/1361-6528/aa9eb8. Nanotechnology. 2018. PMID: 29192890

8

Temperature-Dependent and Gate-Tunable Rectification in a Black Phosphorus/WS₂ van der Waals Heterojunction Diode.

Dastgeer G, Khan MF, Nazir G, Afzal AM, Aftab S, Naqvi BA, Cha J, Min KA, Jamil Y, Jung J, Hong S, Eom J. Dastgeer G, et al. Among authors: eom j. ACS Appl Mater Interfaces. 2018 Apr 18;10(15):13150-13157. doi: 10.1021/acsami.8b00058. Epub 2018 Apr 5. ACS Appl Mater Interfaces. 2018. PMID: 29578329

9

Black Phosphorus-IGZO van der Waals Diode with Low-Resistivity Metal Contacts.

Dastgeer G, Khan MF, Cha J, Afzal AM, Min KH, Ko BM, Liu H, Hong S, Eom J. Dastgeer G, et al. Among authors: eom j. ACS Appl Mater Interfaces. 2019 Mar 20;11(11):10959-10966. doi: 10.1021/acsami.8b20231. Epub 2019 Mar 8. ACS Appl Mater Interfaces. 2019. PMID: 30807091

10

MoTe₂ van der Waals homojunction p-n diode with low resistance metal contacts.

Aftab S , Khan MF , Gautam P , Noh H , Eom J . Aftab S , et al. Among authors: eom j. Nanoscale. 2019 May 16;11(19):9518-9525. doi: 10.1039/c8nr10526j. Nanoscale. 2019. PMID: 31049514

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