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Band structure engineering in strain-free GaAs mesoscopic systems.
Orsi Gordo V, Rodrigues LN, Knopper F, Garcia AJ Jr, Iikawa F, Couto ODD Jr, Deneke C. Orsi Gordo V, et al. Among authors: iikawa f. Nanotechnology. 2020 Apr 3;31(25):255202. doi: 10.1088/1361-6528/ab7d74. Epub 2020 Mar 6. Nanotechnology. 2020. PMID: 32143195
Spatial carrier distribution in InP/GaAs type II quantum dots and quantum posts.
Iikawa F, Donchev V, Ivanov Ts, Dias GO, Tizei LH, Lang R, Heredia E, Gomes PF, Brasil MJ, Cotta MA, Ugarte D, Martinez Pastor JP, de Lima MM Jr, Cantarero A. Iikawa F, et al. Nanotechnology. 2011 Feb 11;22(6):065703. doi: 10.1088/0957-4484/22/6/065703. Epub 2011 Jan 7. Nanotechnology. 2011. PMID: 21212489
Optical emission of InAs nanowires.
Möller M, de Lima MM Jr, Cantarero A, Chiaramonte T, Cotta MA, Iikawa F. Möller M, et al. Among authors: iikawa f. Nanotechnology. 2012 Sep 21;23(37):375704. doi: 10.1088/0957-4484/23/37/375704. Epub 2012 Aug 24. Nanotechnology. 2012. PMID: 22922756
30 results