Tchernycheva M - Search Results

1

Modeling of the electron beam induced current signal in nanowires with an axial p-n junction.

Lahreche A, Babichev AV, Beggah Y, Tchernycheva M. Lahreche A, et al. Among authors: tchernycheva m. Nanotechnology. 2022 Jul 4;33(39). doi: 10.1088/1361-6528/ac7887. Nanotechnology. 2022. PMID: 35700698

2

Photovoltaic properties of GaAsP core-shell nanowires on Si(001) substrate.

Tchernycheva M, Rigutti L, Jacopin G, de Luna Bugallo A, Lavenus P, Julien FH, Timofeeva M, Bouravleuv AD, Cirlin GE, Dhaka V, Lipsanen H, Largeau L. Tchernycheva M, et al. Nanotechnology. 2012 Jul 5;23(26):265402. doi: 10.1088/0957-4484/23/26/265402. Epub 2012 Jun 15. Nanotechnology. 2012. PMID: 22699243

3

InGaN/GaN core-shell single nanowire light emitting diodes with graphene-based p-contact.

Tchernycheva M, Lavenus P, Zhang H, Babichev AV, Jacopin G, Shahmohammadi M, Julien FH, Ciechonski R, Vescovi G, Kryliouk O. Tchernycheva M, et al. Nano Lett. 2014 May 14;14(5):2456-65. doi: 10.1021/nl5001295. Epub 2014 Apr 23. Nano Lett. 2014. PMID: 24742151

4

Experimental and theoretical analysis of transport properties of core-shell wire light emitting diodes probed by electron beam induced current microscopy.

Lavenus P, Messanvi A, Rigutti L, De Luna Bugallo A, Zhang H, Bayle F, Julien FH, Eymery J, Durand C, Tchernycheva M. Lavenus P, et al. Among authors: tchernycheva m. Nanotechnology. 2014 Jun 27;25(25):255201. doi: 10.1088/0957-4484/25/25/255201. Epub 2014 Jun 4. Nanotechnology. 2014. PMID: 24897006

5

Contact properties to CVD-graphene on GaAs substrates for optoelectronic applications.

Babichev AV, Gasumyants VE, Egorov AY, Vitusevich S, Tchernycheva M. Babichev AV, et al. Among authors: tchernycheva m. Nanotechnology. 2014 Aug 22;25(33):335707. doi: 10.1088/0957-4484/25/33/335707. Epub 2014 Jul 30. Nanotechnology. 2014. PMID: 25074754

6

Core-shell InGaN/GaN nanowire light emitting diodes analyzed by electron beam induced current microscopy and cathodoluminescence mapping.

Tchernycheva M, Neplokh V, Zhang H, Lavenus P, Rigutti L, Bayle F, Julien FH, Babichev A, Jacopin G, Largeau L, Ciechonski R, Vescovi G, Kryliouk O. Tchernycheva M, et al. Nanoscale. 2015 Jul 21;7(27):11692-701. doi: 10.1039/c5nr00623f. Epub 2015 Jun 23. Nanoscale. 2015. PMID: 26100114

7

Investigation of Photovoltaic Properties of Single Core-Shell GaN/InGaN Wires.

Messanvi A, Zhang H, Neplokh V, Julien FH, Bayle F, Foldyna M, Bougerol C, Gautier E, Babichev A, Durand C, Eymery J, Tchernycheva M. Messanvi A, et al. Among authors: tchernycheva m. ACS Appl Mater Interfaces. 2015 Oct 7;7(39):21898-906. doi: 10.1021/acsami.5b06473. Epub 2015 Sep 28. ACS Appl Mater Interfaces. 2015. PMID: 26378593

8

Substrate-Free InGaN/GaN Nanowire Light-Emitting Diodes.

Neplokh V, Messanvi A, Zhang H, Julien FH, Babichev A, Eymery J, Durand C, Tchernycheva M. Neplokh V, et al. Among authors: tchernycheva m. Nanoscale Res Lett. 2015 Dec;10(1):447. doi: 10.1186/s11671-015-1143-5. Epub 2015 Nov 17. Nanoscale Res Lett. 2015. PMID: 26577391 Free PMC article.

9

Influence of Substrate Microstructure on the Transport Properties of CVD-Graphene.

Babichev AV, Rykov SA, Tchernycheva M, Smirnov AN, Davydov VY, Kumzerov YA, Butko VY. Babichev AV, et al. Among authors: tchernycheva m. ACS Appl Mater Interfaces. 2016 Jan 13;8(1):240-6. doi: 10.1021/acsami.5b08479. Epub 2015 Dec 24. ACS Appl Mater Interfaces. 2016. PMID: 26652757

10

Self-induced growth of vertical GaN nanowires on silica.

Kumaresan V, Largeau L, Oehler F, Zhang H, Mauguin O, Glas F, Gogneau N, Tchernycheva M, Harmand JC. Kumaresan V, et al. Among authors: tchernycheva m. Nanotechnology. 2016 Apr 1;27(13):135602. doi: 10.1088/0957-4484/27/13/135602. Epub 2016 Feb 19. Nanotechnology. 2016. PMID: 26895252

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