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Electromechanical conversion efficiency of GaN NWs: critical influence of the NW stiffness, the Schottky nano-contact and the surface charge effects.
Nanoscale. 2022 Mar 31;14(13):4965-4976. doi: 10.1039/d1nr07863a.
Nanoscale. 2022.
PMID: 35297939
Investigation of the effect of the doping order in GaN nanowire p-n junctions grown by molecular-beam epitaxy.
Saket O, Wang J, Amador-Mendez N, Morassi M, Kunti A, Bayle F, Collin S, Jollivet A, Babichev A, Sodhi T, Harmand JC, Julien FH, Gogneau N, Tchernycheva M.
Saket O, et al. Among authors: sodhi t.
Nanotechnology. 2021 Feb 19;32(8):085705. doi: 10.1088/1361-6528/abc91a.
Nanotechnology. 2021.
PMID: 33171444
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