Investigation of the effect of the doping order in GaN nanowire p-n junctions grown by molecular-beam epitaxy.
Saket O, Wang J, Amador-Mendez N, Morassi M, Kunti A, Bayle F, Collin S, Jollivet A, Babichev A, Sodhi T, Harmand JC, Julien FH, Gogneau N, Tchernycheva M.
Saket O, et al. Among authors: harmand jc.
Nanotechnology. 2021 Feb 19;32(8):085705. doi: 10.1088/1361-6528/abc91a.
Nanotechnology. 2021.
PMID: 33171444