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Correction to Doping Graphene with Substitutional Mn.
Lin PC, Villarreal R, Achilli S, Bana H, Nair MN, Tejeda A, Verguts K, De Gendt S, Auge M, Hofsäss H, De Feyter S, Di Santo G, Petaccia L, Brems S, Fratesi G, Pereira LMC. Lin PC, et al. Among authors: hofsass h. ACS Nano. 2022 Mar 22;16(3):4974. doi: 10.1021/acsnano.2c01897. Epub 2022 Mar 14. ACS Nano. 2022. PMID: 35285611 No abstract available.
Doping Graphene with Substitutional Mn.
Lin PC, Villarreal R, Achilli S, Bana H, Nair MN, Tejeda A, Verguts K, De Gendt S, Auge M, Hofsäss H, De Feyter S, Di Santo G, Petaccia L, Brems S, Fratesi G, Pereira LMC. Lin PC, et al. Among authors: hofsass h. ACS Nano. 2021 Mar 23;15(3):5449-5458. doi: 10.1021/acsnano.1c00139. Epub 2021 Feb 17. ACS Nano. 2021. PMID: 33596385 Free article.
Anomalies at the Dirac Point in Graphene and Its Hole-Doped Compositions.
Pramanik A, Thakur S, Singh B, Willke P, Wenderoth M, Hofsäss H, Di Santo G, Petaccia L, Maiti K. Pramanik A, et al. Among authors: hofsass h. Phys Rev Lett. 2022 Apr 22;128(16):166401. doi: 10.1103/PhysRevLett.128.166401. Phys Rev Lett. 2022. PMID: 35522498
Optical Properties of MoSe2 Monolayer Implanted with Ultra-Low-Energy Cr Ions.
Bui MN, Rost S, Auge M, Zhou L, Friedrich C, Blügel S, Kretschmer S, Krasheninnikov AV, Watanabe K, Taniguchi T, Hofsäss HC, Grützmacher D, Kardynał BE. Bui MN, et al. Among authors: hofsass hc. ACS Appl Mater Interfaces. 2023 Jul 26;15(29):35321-35331. doi: 10.1021/acsami.3c05366. Epub 2023 Jul 11. ACS Appl Mater Interfaces. 2023. PMID: 37432886 Free PMC article.
Ion implantation of graphene-toward IC compatible technologies.
Bangert U, Pierce W, Kepaptsoglou DM, Ramasse Q, Zan R, Gass MH, Van den Berg JA, Boothroyd CB, Amani J, Hofsäss H. Bangert U, et al. Among authors: hofsass h. Nano Lett. 2013 Oct 9;13(10):4902-7. doi: 10.1021/nl402812y. Epub 2013 Oct 1. Nano Lett. 2013. PMID: 24059439
28 results