Wu X - Search Results

1

Wafer-Scalable Single-Layer Amorphous Molybdenum Trioxide.

Alam MH, Chowdhury S, Roy A, Wu X, Ge R, Rodder MA, Chen J, Lu Y, Stern C, Houben L, Chrostowski R, Burlison SR, Yang SJ, Serna MI, Dodabalapur A, Mangolini F, Naveh D, Lee JC, Banerjee SK, Warner JH, Akinwande D. Alam MH, et al. Among authors: wu x. ACS Nano. 2022 Mar 22;16(3):3756-3767. doi: 10.1021/acsnano.1c07705. Epub 2022 Feb 21. ACS Nano. 2022. PMID: 35188367

2

Atomristor: Nonvolatile Resistance Switching in Atomic Sheets of Transition Metal Dichalcogenides.

Ge R, Wu X, Kim M, Shi J, Sonde S, Tao L, Zhang Y, Lee JC, Akinwande D. Ge R, et al. Among authors: wu x. Nano Lett. 2018 Jan 10;18(1):434-441. doi: 10.1021/acs.nanolett.7b04342. Epub 2017 Dec 19. Nano Lett. 2018. PMID: 29236504

3

Understanding of multiple resistance states by current sweeping in MoS₂-based non-volatile memory devices.

Wu X, Ge R, Akinwande D, Lee JC. Wu X, et al. Nanotechnology. 2020 Nov 13;31(46):465206. doi: 10.1088/1361-6528/aba46a. Nanotechnology. 2020. PMID: 32647100

4

Thinnest Nonvolatile Memory Based on Monolayer h-BN.

Wu X, Ge R, Chen PA, Chou H, Zhang Z, Zhang Y, Banerjee S, Chiang MH, Lee JC, Akinwande D. Wu X, et al. Adv Mater. 2019 Apr;31(15):e1806790. doi: 10.1002/adma.201806790. Epub 2019 Feb 17. Adv Mater. 2019. PMID: 30773734

5

Resistance state evolution under constant electric stress on a MoS₂ non-volatile resistive switching device.

Wu X, Ge R, Huang Y, Akinwande D, Lee JC. Wu X, et al. RSC Adv. 2020 Nov 19;10(69):42249-42255. doi: 10.1039/d0ra05209d. eCollection 2020 Nov 17. RSC Adv. 2020. PMID: 35516745 Free PMC article.

6

A Library of Atomically Thin 2D Materials Featuring the Conductive-Point Resistive Switching Phenomenon.

Ge R, Wu X, Liang L, Hus SM, Gu Y, Okogbue E, Chou H, Shi J, Zhang Y, Banerjee SK, Jung Y, Lee JC, Akinwande D. Ge R, et al. Among authors: wu x. Adv Mater. 2021 Feb;33(7):e2007792. doi: 10.1002/adma.202007792. Epub 2020 Dec 28. Adv Mater. 2021. PMID: 33368706

7

Zero-static power radio-frequency switches based on MoS₂ atomristors.

Kim M, Ge R, Wu X, Lan X, Tice J, Lee JC, Akinwande D. Kim M, et al. Among authors: wu x. Nat Commun. 2018 Jun 28;9(1):2524. doi: 10.1038/s41467-018-04934-x. Nat Commun. 2018. PMID: 29955064 Free PMC article.

8

A study of the interfacial resistive switching mechanism by proton exchange reactions on the SiO(x) layer.

Zhou F, Chang YF, Chen YC, Wu X, Zhang Y, Fowler B, Lee JC. Zhou F, et al. Among authors: wu x. Phys Chem Chem Phys. 2016 Jan 14;18(2):700-3. doi: 10.1039/c5cp06507k. Phys Chem Chem Phys. 2016. PMID: 26659556

9

Digital ray: enhancing cataractous fundus images using style transfer generative adversarial networks to improve retinopathy detection.

Liu L, Hong J, Wu Y, Liu S, Wang K, Li M, Zhao L, Liu Z, Li L, Cui T, Tsui CK, Xu F, Hu W, Yun D, Chen X, Shang Y, Bi S, Wei X, Lai Y, Lin D, Fu Z, Deng Y, Cai K, Xie Y, Cao Z, Wang D, Zhang X, Dongye M, Lin H, Wu X. Liu L, et al. Among authors: wu x. Br J Ophthalmol. 2024 Jun 5:bjo-2024-325403. doi: 10.1136/bjo-2024-325403. Online ahead of print. Br J Ophthalmol. 2024. PMID: 38839251

10

Inhibiting the Jahn-Teller Effect of Manganese Hexacyanoferrate via Ni and Cu Co-Doping for Advanced Sodium Ion Batteries.

Luo Y, Shen J, Yao Y, Dai J, Ling F, Li L, Jiang Y, Wu X, Rui X, Yu Y. Luo Y, et al. Among authors: wu x. Adv Mater. 2024 Jun 5:e2405458. doi: 10.1002/adma.202405458. Online ahead of print. Adv Mater. 2024. PMID: 38839062

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