Schörmann J - Search Results

1

Design of Ordered Mesoporous CeO₂-YSZ Nanocomposite Thin Films with Mixed Ionic/Electronic Conductivity via Surface Engineering.

Celik E, Cop P, Negi RS, Mazilkin A, Ma Y, Klement P, Schörmann J, Chatterjee S, Brezesinski T, Elm MT. Celik E, et al. Among authors: schormann j. ACS Nano. 2022 Feb 22;16(2):3182-3193. doi: 10.1021/acsnano.1c11032. Epub 2022 Feb 9. ACS Nano. 2022. PMID: 35138801

2

Electrical transport properties of Ge-doped GaN nanowires.

Schäfer M, Günther M, Länger C, Müßener J, Feneberg M, Uredat P, Elm MT, Hille P, Schörmann J, Teubert J, Henning T, Klar PJ, Eickhoff M. Schäfer M, et al. Among authors: schormann j. Nanotechnology. 2015 Mar 27;26(13):135704. doi: 10.1088/0957-4484/26/13/135704. Epub 2015 Mar 11. Nanotechnology. 2015. PMID: 25760310

3

Doping-Induced Universal Conductance Fluctuations in GaN Nanowires.

Elm MT, Uredat P, Binder J, Ostheim L, Schäfer M, Hille P, Müßener J, Schörmann J, Eickhoff M, Klar PJ. Elm MT, et al. Among authors: schormann j. Nano Lett. 2015 Dec 9;15(12):7822-8. doi: 10.1021/acs.nanolett.5b02332. Epub 2015 Nov 12. Nano Lett. 2015. PMID: 26544014

4

Bias-Controlled Optical Transitions in GaN/AlN Nanowire Heterostructures.

Müßener J, Hille P, Grieb T, Schörmann J, Teubert J, Monroy E, Rosenauer A, Eickhoff M. Müßener J, et al. Among authors: schormann j. ACS Nano. 2017 Sep 26;11(9):8758-8767. doi: 10.1021/acsnano.7b02419. Epub 2017 Aug 14. ACS Nano. 2017. PMID: 28771318

5

Surface Diffusion Control Enables Tailored-Aspect-Ratio Nanostructures in Area-Selective Atomic Layer Deposition.

Klement P, Anders D, Gümbel L, Bastianello M, Michel F, Schörmann J, Elm MT, Heiliger C, Chatterjee S. Klement P, et al. Among authors: schormann j. ACS Appl Mater Interfaces. 2021 Apr 28;13(16):19398-19405. doi: 10.1021/acsami.0c22121. Epub 2021 Apr 15. ACS Appl Mater Interfaces. 2021. PMID: 33856210

6

Correction to Design of Ordered Mesoporous CeO₂/YSZ Nanocomposite Thin Films with Mixed Ionic/Electronic Conductivity via Surface Engineering.

Celik E, Cop P, Negi RS, Mazilkin A, Ma Y, Klement P, Schörmann J, Chatterjee S, Brezesinski T, Elm MT. Celik E, et al. Among authors: schormann j. ACS Nano. 2022 Jul 26;16(7):11484. doi: 10.1021/acsnano.2c06057. Epub 2022 Jun 27. ACS Nano. 2022. PMID: 35759620 No abstract available.

7

Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic In_xGa_1-xN.

Zscherp MF, Jentsch SA, Müller MJ, Lider V, Becker C, Chen L, Littmann M, Meier F, Beyer A, Hofmann DM, As DJ, Klar PJ, Volz K, Chatterjee S, Schörmann J. Zscherp MF, et al. Among authors: schormann j. ACS Appl Mater Interfaces. 2023 Aug 23;15(33):39513-39522. doi: 10.1021/acsami.3c06319. Epub 2023 Aug 2. ACS Appl Mater Interfaces. 2023. PMID: 37530411

8

Probing the internal electric field in GaN/AlGaN nanowire heterostructures.

Müssener J, Teubert J, Hille P, Schäfer M, Schörmann J, de la Mata M, Arbiol J, Eickhoff M. Müssener J, et al. Among authors: schormann j. Nano Lett. 2014 Sep 10;14(9):5118-22. doi: 10.1021/nl501845m. Epub 2014 Aug 20. Nano Lett. 2014. PMID: 25115566

9

Bias-Controlled Spectral Response in GaN/AlN Single-Nanowire Ultraviolet Photodetectors.

Spies M, den Hertog MI, Hille P, Schörmann J, Polaczyński J, Gayral B, Eickhoff M, Monroy E, Lähnemann J. Spies M, et al. Among authors: schormann j. Nano Lett. 2017 Jul 12;17(7):4231-4239. doi: 10.1021/acs.nanolett.7b01118. Epub 2017 Jun 16. Nano Lett. 2017. PMID: 28613893

10

Photoluminescence Detection of Surface Oxidation Processes on InGaN/GaN Nanowire Arrays.

Maier K, Helwig A, Müller G, Schörmann J, Eickhoff M. Maier K, et al. Among authors: schormann j. ACS Sens. 2018 Nov 26;3(11):2254-2260. doi: 10.1021/acssensors.8b00417. Epub 2018 Oct 26. ACS Sens. 2018. PMID: 30350588

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