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Electrical transport properties of Ge-doped GaN nanowires.
Schäfer M, Günther M, Länger C, Müßener J, Feneberg M, Uredat P, Elm MT, Hille P, Schörmann J, Teubert J, Henning T, Klar PJ, Eickhoff M. Schäfer M, et al. Among authors: elm mt. Nanotechnology. 2015 Mar 27;26(13):135704. doi: 10.1088/0957-4484/26/13/135704. Epub 2015 Mar 11. Nanotechnology. 2015. PMID: 25760310
Doping-Induced Universal Conductance Fluctuations in GaN Nanowires.
Elm MT, Uredat P, Binder J, Ostheim L, Schäfer M, Hille P, Müßener J, Schörmann J, Eickhoff M, Klar PJ. Elm MT, et al. Nano Lett. 2015 Dec 9;15(12):7822-8. doi: 10.1021/acs.nanolett.5b02332. Epub 2015 Nov 12. Nano Lett. 2015. PMID: 26544014
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