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Ferroelectricity and antiferroelectricity of doped thin HfO2-based films.
Park MH, Lee YH, Kim HJ, Kim YJ, Moon T, Kim KD, Müller J, Kersch A, Schroeder U, Mikolajick T, Hwang CS. Park MH, et al. Among authors: hwang cs. Adv Mater. 2015 Mar 18;27(11):1811-31. doi: 10.1002/adma.201404531. Epub 2015 Feb 11. Adv Mater. 2015. PMID: 25677113
Time-Dependent Negative Capacitance Effects in Al2O3/BaTiO3 Bilayers.
Kim YJ, Yamada H, Moon T, Kwon YJ, An CH, Kim HJ, Kim KD, Lee YH, Hyun SD, Park MH, Hwang CS. Kim YJ, et al. Among authors: hwang cs. Nano Lett. 2016 Jul 13;16(7):4375-81. doi: 10.1021/acs.nanolett.6b01480. Epub 2016 Jun 1. Nano Lett. 2016. PMID: 27231754
Effect of Zr Content on the Wake-Up Effect in Hf1-xZrxO2 Films.
Park MH, Kim HJ, Kim YJ, Lee YH, Moon T, Kim KD, Hyun SD, Fengler F, Schroeder U, Hwang CS. Park MH, et al. Among authors: hwang cs. ACS Appl Mater Interfaces. 2016 Jun 22;8(24):15466-75. doi: 10.1021/acsami.6b03586. Epub 2016 Jun 9. ACS Appl Mater Interfaces. 2016. PMID: 27237137
458 results