Towards a 3D GeSbTe phase change memory with integrated selector by non-aqueous electrodeposition.
Huang R, Kissling GP, Kashtiban R, Noori YJ, Cicvarić K, Zhang W, Hector AL, Beanland R, Smith DC, Reid G, Bartlett PN, de Groot CHK.
Huang R, et al. Among authors: smith dc.
Faraday Discuss. 2019 Feb 18;213(0):339-355. doi: 10.1039/c8fd00126j.
Faraday Discuss. 2019.
PMID: 30411749