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Record pure zincblende phase in GaAs nanowires down to 5 nm in radius.
Gil E, Dubrovskii VG, Avit G, André Y, Leroux C, Lekhal K, Grecenkov J, Trassoudaine A, Castelluci D, Monier G, Ramdani RM, Robert-Goumet C, Bideux L, Harmand JC, Glas F. Gil E, et al. Among authors: robert goumet c. Nano Lett. 2014 Jul 9;14(7):3938-44. doi: 10.1021/nl501239h. Epub 2014 Jun 3. Nano Lett. 2014. PMID: 24873917
Si Doping of Vapor-Liquid-Solid GaAs Nanowires: n-Type or p-Type?
Hijazi H, Monier G, Gil E, Trassoudaine A, Bougerol C, Leroux C, Castellucci D, Robert-Goumet C, Hoggan PE, André Y, Isik Goktas N, LaPierre RR, Dubrovskii VG. Hijazi H, et al. Among authors: robert goumet c. Nano Lett. 2019 Jul 10;19(7):4498-4504. doi: 10.1021/acs.nanolett.9b01308. Epub 2019 Jun 20. Nano Lett. 2019. PMID: 31203632
Fast growth synthesis of GaAs nanowires with exceptional length.
Ramdani MR, Gil E, Leroux Ch, André Y, Trassoudaine A, Castelluci D, Bideux L, Monier G, Robert-Goumet C, Kupka R. Ramdani MR, et al. Among authors: robert goumet c. Nano Lett. 2010 May 12;10(5):1836-41. doi: 10.1021/nl100557d. Nano Lett. 2010. PMID: 20380477