Ye P - Search Results

1

A tunable ferroelectric based unreleased RF resonator.

He Y, Bahr B, Si M, Ye P, Weinstein D. He Y, et al. Among authors: ye p. Microsyst Nanoeng. 2020 Jan 13;6:8. doi: 10.1038/s41378-019-0110-1. eCollection 2020. Microsyst Nanoeng. 2020. PMID: 34567623 Free PMC article.

2

Statistical study of deep submicron dual-gated field-effect transistors on monolayer chemical vapor deposition molybdenum disulfide films.

Liu H, Si M, Najmaei S, Neal AT, Du Y, Ajayan PM, Lou J, Ye PD. Liu H, et al. Nano Lett. 2013 Jun 12;13(6):2640-6. doi: 10.1021/nl400778q. Epub 2013 May 20. Nano Lett. 2013. PMID: 23679044

3

Switching mechanism in single-layer molybdenum disulfide transistors: an insight into current flow across Schottky barriers.

Liu H, Si M, Deng Y, Neal AT, Du Y, Najmaei S, Ajayan PM, Lou J, Ye PD. Liu H, et al. ACS Nano. 2014 Jan 28;8(1):1031-8. doi: 10.1021/nn405916t. Epub 2013 Dec 23. ACS Nano. 2014. PMID: 24351134

4

Performance potential and limit of MoS2 transistors.

Li X, Yang L, Si M, Li S, Huang M, Ye P, Wu Y. Li X, et al. Among authors: ye p. Adv Mater. 2015 Mar 4;27(9):1547-52. doi: 10.1002/adma.201405068. Epub 2015 Jan 13. Adv Mater. 2015. PMID: 25586919

5

One-Dimensional van der Waals Material Tellurium: Raman Spectroscopy under Strain and Magneto-Transport.

Du Y, Qiu G, Wang Y, Si M, Xu X, Wu W, Ye PD. Du Y, et al. Nano Lett. 2017 Jun 14;17(6):3965-3973. doi: 10.1021/acs.nanolett.7b01717. Epub 2017 Jun 2. Nano Lett. 2017. PMID: 28562056

6

Steep-slope hysteresis-free negative capacitance MoS₂ transistors.

Si M, Su CJ, Jiang C, Conrad NJ, Zhou H, Maize KD, Qiu G, Wu CT, Shakouri A, Alam MA, Ye PD. Si M, et al. Nat Nanotechnol. 2018 Jan;13(1):24-28. doi: 10.1038/s41565-017-0010-1. Epub 2017 Dec 18. Nat Nanotechnol. 2018. PMID: 29255287

7

Steep-Slope WSe₂ Negative Capacitance Field-Effect Transistor.

Si M, Jiang C, Chung W, Du Y, Alam MA, Ye PD. Si M, et al. Nano Lett. 2018 Jun 13;18(6):3682-3687. doi: 10.1021/acs.nanolett.8b00816. Epub 2018 May 11. Nano Lett. 2018. PMID: 29733598

8

Ferroelectric Field-Effect Transistors Based on MoS₂ and CuInP₂S₆ Two-Dimensional van der Waals Heterostructure.

Si M, Liao PY, Qiu G, Duan Y, Ye PD. Si M, et al. ACS Nano. 2018 Jul 24;12(7):6700-6705. doi: 10.1021/acsnano.8b01810. Epub 2018 Jun 28. ACS Nano. 2018. PMID: 29944829

9

Room-Temperature Electrocaloric Effect in Layered Ferroelectric CuInP₂S₆ for Solid-State Refrigeration.

Si M, Saha AK, Liao PY, Gao S, Neumayer SM, Jian J, Qin J, Balke Wisinger N, Wang H, Maksymovych P, Wu W, Gupta SK, Ye PD. Si M, et al. Among authors: ye pd. ACS Nano. 2019 Aug 27;13(8):8760-8765. doi: 10.1021/acsnano.9b01491. Epub 2019 Aug 6. ACS Nano. 2019. PMID: 31374166

10

β-Ga₂O₃ Nanomembrane Negative Capacitance Field-Effect Transistors with Steep Subthreshold Slope for Wide Band Gap Logic Applications.

Si M, Yang L, Zhou H, Ye PD. Si M, et al. ACS Omega. 2017 Oct 25;2(10):7136-7140. doi: 10.1021/acsomega.7b01289. eCollection 2017 Oct 31. ACS Omega. 2017. PMID: 31457293 Free PMC article.

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