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Many-Body Effect and Device Performance Limit of Monolayer InSe.
Wang Y, Fei R, Quhe R, Li J, Zhang H, Zhang X, Shi B, Xiao L, Song Z, Yang J, Shi J, Pan F, Lu J. Wang Y, et al. Among authors: shi b, shi j. ACS Appl Mater Interfaces. 2018 Jul 11;10(27):23344-23352. doi: 10.1021/acsami.8b06427. Epub 2018 Jun 27. ACS Appl Mater Interfaces. 2018. PMID: 29916240
Gate-tunable high magnetoresistance in monolayer Fe3GeTe2 spin valves.
Yang J , Quhe R , Liu S , Peng Y , Sun X , Zha L , Wu B , Shi B , Yang C , Shi J , Tian G , Wang C , Lu J , Yang J . Yang J , et al. Among authors: shi b, shi j. Phys Chem Chem Phys. 2020 Nov 18;22(44):25730-25739. doi: 10.1039/d0cp03761c. Phys Chem Chem Phys. 2020. PMID: 33146647
Can Carbon Nanotube Transistors Be Scaled Down to the Sub-5 nm Gate Length?
Xu L, Yang J, Qiu C, Liu S, Zhou W, Li Q, Shi B, Ma J, Yang C, Lu J, Zhang Z. Xu L, et al. Among authors: shi b. ACS Appl Mater Interfaces. 2021 Jul 14;13(27):31957-31967. doi: 10.1021/acsami.1c05229. Epub 2021 Jul 2. ACS Appl Mater Interfaces. 2021. PMID: 34210135
Performance Limit of Ultrathin GaAs Transistors.
Li Q, Fang S, Liu S, Xu L, Xu L, Yang C, Yang J, Shi B, Ma J, Yang J, Quhe R, Lu J. Li Q, et al. Among authors: shi b. ACS Appl Mater Interfaces. 2022 May 16. doi: 10.1021/acsami.2c01134. Online ahead of print. ACS Appl Mater Interfaces. 2022. PMID: 35575689
Sub-5 nm monolayer black phosphorene tunneling transistors.
Li H, Shi B, Pan Y, Li J, Xu L, Xu L, Zhang Z, Pan F, Lu J. Li H, et al. Among authors: shi b. Nanotechnology. 2018 Nov 30;29(48):485202. doi: 10.1088/1361-6528/aae0cb. Epub 2018 Sep 12. Nanotechnology. 2018. PMID: 30207546
5,167 results