Chang KC - Search Results

1

Supercritical Ammoniation-Enabled Interfacial Polarization for Function-Mode Transformation and Overall Optimization of Thin-Film Transistors.

Chang KC, Liu K, Hu L, Li L, Lin X, Zhang S, Zhang R, Liu HJ, Kuo TP. Chang KC, et al. ACS Appl Mater Interfaces. 2021 Aug 25;13(33):40053-40061. doi: 10.1021/acsami.1c09673. Epub 2021 Aug 15. ACS Appl Mater Interfaces. 2021. PMID: 34392676

2

High performance of graphene oxide-doped silicon oxide-based resistance random access memory.

Zhang R, Chang KC, Chang TC, Tsai TM, Chen KH, Lou JC, Chen JH, Young TF, Shih CC, Yang YL, Pan YC, Chu TJ, Huang SY, Pan CH, Su YT, Syu YE, Sze SM. Zhang R, et al. Among authors: chang tc, chang kc. Nanoscale Res Lett. 2013 Nov 21;8(1):497. doi: 10.1186/1556-276X-8-497. Nanoscale Res Lett. 2013. PMID: 24261454 Free PMC article.

3

Space electric field concentrated effect for Zr:SiO2 RRAM devices using porous SiO2 buffer layer.

Chang KC, Huang JW, Chang TC, Tsai TM, Chen KH, Young TF, Chen JH, Zhang R, Lou JC, Huang SY, Pan YC, Huang HC, Syu YE, Gan DS, Bao DH, Sze SM. Chang KC, et al. Among authors: chang tc. Nanoscale Res Lett. 2013 Dec 11;8(1):523. doi: 10.1186/1556-276X-8-523. Nanoscale Res Lett. 2013. PMID: 24330524 Free PMC article.

4

Hydrogen induced redox mechanism in amorphous carbon resistive random access memory.

Chen YJ, Chen HL, Young TF, Chang TC, Tsai TM, Chang KC, Zhang R, Chen KH, Lou JC, Chu TJ, Chen JH, Bao DH, Sze SM. Chen YJ, et al. Among authors: chang tc, chang kc. Nanoscale Res Lett. 2014 Jan 29;9(1):52. doi: 10.1186/1556-276X-9-52. Nanoscale Res Lett. 2014. PMID: 24475979 Free PMC article.

5

Physical and chemical mechanisms in oxide-based resistance random access memory.

Chang KC, Chang TC, Tsai TM, Zhang R, Hung YC, Syu YE, Chang YF, Chen MC, Chu TJ, Chen HL, Pan CH, Shih CC, Zheng JC, Sze SM. Chang KC, et al. Among authors: chang tc, chang yf. Nanoscale Res Lett. 2015 Mar 12;10:120. doi: 10.1186/s11671-015-0740-7. eCollection 2015. Nanoscale Res Lett. 2015. PMID: 25873842 Free PMC article.

6

Rational Hydrogenation for Enhanced Mobility and High Reliability on ZnO-based Thin Film Transistors: From Simulation to Experiment.

Xu L, Chen Q, Liao L, Liu X, Chang TC, Chang KC, Tsai TM, Jiang C, Wang J, Li J. Xu L, et al. Among authors: chang tc, chang kc. ACS Appl Mater Interfaces. 2016 Mar 2;8(8):5408-15. doi: 10.1021/acsami.5b10220. Epub 2016 Feb 17. ACS Appl Mater Interfaces. 2016. PMID: 26856932

7

Resistance Switching Characteristics Induced by O₂ Plasma Treatment of an Indium Tin Oxide Film for Use as an Insulator in Resistive Random Access Memory.

Chen PH, Chang TC, Chang KC, Tsai TM, Pan CH, Chen MC, Su YT, Lin CY, Tseng YT, Huang HC, Wu H, Deng N, Qian H, Sze SM. Chen PH, et al. Among authors: chang tc, chang kc. ACS Appl Mater Interfaces. 2017 Jan 25;9(3):3149-3155. doi: 10.1021/acsami.6b14282. Epub 2017 Jan 10. ACS Appl Mater Interfaces. 2017. PMID: 28072511

8

Surface Engineering of Polycrystalline Silicon for Long-Term Mechanical Stress Endurance Enhancement in Flexible Low-Temperature Poly-Si Thin-Film Transistors.

Chen BW, Chang TC, Chang KC, Hung YJ, Huang SP, Chen HM, Liao PY, Lin YH, Huang HC, Chiang HC, Yang CI, Zheng YZ, Chu AK, Li HW, Tsai CH, Lu HH, Wang TT, Chang TC. Chen BW, et al. Among authors: chang tc, chang kc. ACS Appl Mater Interfaces. 2017 Apr 5;9(13):11942-11949. doi: 10.1021/acsami.6b14525. Epub 2017 Mar 21. ACS Appl Mater Interfaces. 2017. PMID: 28177598

9

Attaining resistive switching characteristics and selector properties by varying forming polarities in a single HfO₂-based RRAM device with a vanadium electrode.

Lin CY, Chen PH, Chang TC, Chang KC, Zhang SD, Tsai TM, Pan CH, Chen MC, Su YT, Tseng YT, Chang YF, Chen YC, Huang HC, Sze SM. Lin CY, et al. Among authors: chang tc, chang yf, chang kc. Nanoscale. 2017 Jun 29;9(25):8586-8590. doi: 10.1039/c7nr02305g. Nanoscale. 2017. PMID: 28636031

10

Hafnium nanocrystals observed in a HfTiO compound film bring about excellent performance of flexible selectors in memory integration.

Ye C, Xu Z, Chang KC, Li L, Lin X, Zhang R, Zhou Y, Xiong W, Kuo TP. Ye C, et al. Among authors: chang kc. Nanoscale. 2019 Nov 21;11(43):20792-20796. doi: 10.1039/c9nr07470h. Epub 2019 Oct 28. Nanoscale. 2019. PMID: 31657422

Save citations to file

Email citations

Send citations to clipboard

Add to Collections

Add to My Bibliography

Create a file for external citation management software

Your saved search

Your RSS Feed

My NCBI Filters

Text availability

Article attribute

Article type

Publication date

1,707 results

Search Page